IXTT10N100D2
- Mfr.Part #
- IXTT10N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 10A TO268
- Stock
- 6,412
- In Stock :
- 6,412
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Factory Lead Time :
- 24 Weeks
- Drain to Source Voltage (Vdss) :
- 1000V
- Transistor Type :
- 1 N-Channel
- Terminal Form :
- Gull wing
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 695W (Tc)
- JESD-30 Code :
- R-PSSO-G2
- Product Type :
- MOSFET
- Mounting Style :
- SMD/SMT
- Number of Pins :
- 3
- Published :
- 2011
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 5320pF @ 25V
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 1000V
- Power Dissipation-Max :
- 695W Tc
- Continuous Drain Current (ID) :
- 10A
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- --
- Supplier Device Package :
- TO-268
- Reach Compliance Code :
- Unknown
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS
- Series :
- --
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 5V
- Base Product Number :
- IXTT10
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Surface Mount
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 5A, 10V
- FET Feature :
- Depletion Mode
- JESD-609 Code :
- e3
- Channel Mode :
- Depletion
- Datasheets
- IXTT10N100D2

N-Channel Tube 1.5 Ω @ 5A, 10V ±20V 5320pF @ 25V 200nC @ 5V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT10N100D2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5320pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.To maintain normal operation, the DS breakdown voltage should be kept above 1000V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTT10N100D2 Features
a continuous drain current (ID) of 10A
a 1000V drain to source voltage (Vdss)
IXTT10N100D2 Applications
There are a lot of IXYS
IXTT10N100D2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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