IXTT11P50

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Mfr.Part #
IXTT11P50
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 500V 11A TO268
Stock
35,039
In Stock :
35,039

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Mount :
Surface Mount
Brand :
IXYS
Pin Count :
4
Transistor Element Material :
SILICON
Packaging :
Tube
Product Status :
Active
Package :
Tube
Length :
14 mm
Power Dissipation :
300W
Terminal Form :
Gull wing
Rise Time :
27ns
Channel Mode :
Enhancement
Series :
--
Drain to Source Voltage (Vdss) :
500V
Transistor Application :
SWITCHING
Fall Time (Typ) :
35 ns
RoHS :
Details
ECCN Code :
EAR99
Lead Free :
Lead Free
Supplier Device Package :
TO-268
Transistor Polarity :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
2
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
300W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
300W Tc
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
Type :
Standard Power MOSFET
Vgs (Max) :
±20V
Published :
2005
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Style :
SMD/SMT
Resistance :
750mOhm
FET Type :
P-Channel
Pulsed Drain Current-Max (IDM) :
44A
Width :
16.05 mm
Factory Lead Time :
24 Weeks
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Continuous Drain Current (ID) :
11A
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
750m Ω @ 5.5A, 10V
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Unknown
Transistor Type :
1 P-Channel
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
-500V
Radiation Hardening :
No
Case Connection :
DRAIN
Product Type :
MOSFET
Product Category :
MOSFET
FET Feature :
--
Number of Elements :
1
Terminal Finish :
PURE TIN
Height :
5.1 mm
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Configuration :
Single
Base Product Number :
IXTT11
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
35 ns
Datasheets
IXTT11P50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT11P50 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Type:Standard Power MOSFET, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, IXTT11P50 pinout, IXTT11P50 datasheet PDF, IXTT11P50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT11P50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT11P50


P-Channel Tube 750m Ω @ 5.5A, 10V ±20V 4700pF @ 25V 130nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT11P50 Overview


A device's maximum input capacitance is 4700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Its maximum pulsed drain current is 44A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT11P50 Features


a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 44A.
a 500V drain to source voltage (Vdss)


IXTT11P50 Applications


There are a lot of IXYS
IXTT11P50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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