IXTT120N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

2000 mJ

Terminal Position :

Single

FET Feature :

--

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Lead Free :

Lead Free

JESD-609 Code :

e3

Pbfree Code :

yes

Power Dissipation-Max :

600W Tc

Fall Time (Typ) :

26 ns

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-268AA

Mounting Style :

SMD/SMT

Drain to Source Breakdown Voltage :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

Factory Lead Time :

9 Weeks

Maximum Operating Temperature :

+ 175 C

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

5.1 mm

Base Product Number :

IXTT120

Gate to Source Voltage (Vgs) :

20V

Number of Terminals :

2

Turn-Off Delay Time :

85 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Supplier Device Package :

TO-268

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

16m Ω @ 500mA, 10V

Type :

PolarHT Power MOSFET

Packaging :

Tube

Published :

2006

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Configuration :

Single

Product Category :

MOSFET

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Element Configuration :

Single

Tradename :

PolarHT

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Power Dissipation :

600W

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 25V

Drain to Source Voltage (Vdss) :

150V

Pulsed Drain Current-Max (IDM) :

260A

Width :

16.05 mm

RoHS :

Details

Product Status :

Active

Number of Terminations :

2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Case Connection :

DRAIN

Continuous Drain Current (ID) :

120A

Length :

14 mm

Power Dissipation (Max) :

600W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Elements :

1

Rise Time :

42ns

Drain-source On Resistance-Max :

0.016 Ω

Series :

PolarHT™

DS Breakdown Voltage-Min :

150 V

ECCN Code :

EAR99

Mount :

Surface Mount

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

not_compliant

Subcategory :

MOSFETs

Product Type :

MOSFET