IXTT110N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Number of Terminals :

2

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Lead Free :

Lead Free

Case Connection :

DRAIN

Fall Time (Typ) :

24 ns

Continuous Drain Current (ID) :

110A

Transistor Application :

SWITCHING

Product Type :

MOSFET

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Avalanche Energy Rating (Eas) :

3000 mJ

Channel Mode :

Enhancement

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Drain to Source Breakdown Voltage :

100V

Rise Time :

130ns

JEDEC-95 Code :

TO-268AA

JESD-609 Code :

e3

Vgs (Max) :

±20V

Terminal Position :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

99 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

600W Tc

Packaging :

Tube

Supplier Device Package :

TO-268

Drain Current-Max (Abs) (ID) :

110 A

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Transistor Polarity :

N-Channel

Brand :

IXYS

Number of Elements :

1

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

600 W

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

Published :

2010

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

100 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

18m Ω @ 55A, 10V

Factory Lead Time :

24 Weeks

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

300A

Power Dissipation :

600W

Base Product Number :

IXTT110

Product Category :

MOSFET

FET Feature :

--

Package :

Tube

Product Status :

Active

Series :

Linear L2™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.018 Ω

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation (Max) :

600W (Tc)