IXTT100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-268

Channel Mode :

Enhancement

Continuous Drain Current :

100(A)

Surface Mount :

yes

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Resistance :

27mOhm

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXTT100

Product Status :

Active

Height :

5.1 mm

Transistor Type :

1 N-Channel

Input Capacitance :

6.3 nF

Mounting Type :

Surface Mount

Rds On Max :

24 mΩ

Power Dissipation-Max :

600W Tc

Tradename :

PolarHT

Qualification Status :

Not Qualified

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Rad Hardened :

No

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

250V

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Terminal Form :

Gull wing

Mounting :

Surface Mount

Pin Count :

4

Lead Free :

Lead Free

Max Power Dissipation :

600 W

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Packaging :

Tube

Avalanche Energy Rating (Eas) :

2000 mJ

Rise Time :

26ns

Factory Lead Time :

24 Weeks

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Series :

PolarHT™

Terminal Position :

Single

Length :

14 mm

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

2

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Subcategory :

MOSFETs

Pulsed Drain Current-Max (IDM) :

250A

Continuous Drain Current (ID) :

100A

FET Feature :

--

Type :

Power MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temp Range :

-55C to 150C

Reach Compliance Code :

not_compliant

Package :

Tube

Drain-source On Resistance-Max :

0.027 Ω

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity :

N

Gate-Source Voltage (Max) :

±20(V)

Power Dissipation :

600W

Drain to Source Voltage (Vdss) :

250V

Product Type :

MOSFET

Package Shape :

RECTANGULAR

RoHS :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Drain to Source Resistance :

27 mΩ

Drain-Source On-Volt :

250(V)

FET Type :

N-Channel

Fall Time (Typ) :

28 ns

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Mounting Style :

SMD/SMT

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Published :

2006

Operating Temperature Classification :

Military

Pbfree Code :

yes

JEDEC-95 Code :

TO-268AA

Minimum Operating Temperature :

- 55 C

Min Operating Temperature :

-55 °C

Power Dissipation (Max) :

600W (Tc)

Number of Channels :

1 Channel

Width :

16.05 mm

Max Operating Temperature :

150 °C

Rds On (Max) @ Id, Vgs :

24m Ω @ 50A, 10V

Package Type :

TO-268

DS Breakdown Voltage-Min :

250 V

Turn-Off Delay Time :

100 ns