IXTT110N10P

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Mfr.Part #
IXTT110N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO268
Stock
15,411
In Stock :
15,411

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.015Ohm
Additional Feature :
AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-268AA
Pulsed Drain Current-Max (IDM) :
250A
Rise Time :
25 ns
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
480W (Tc)
Continuous Drain Current (ID) :
110A
Avalanche Energy Rating (Eas) :
1000 mJ
JESD-30 Code :
R-PSSO-G2
Manufacturer :
IXYS
Vgs (Max) :
±20V
Product Type :
MOSFET
Package :
Tube
Number of Terminals :
2
Product Category :
MOSFET
Width :
14 mm
Packaging :
Tube
Power Dissipation-Max :
480W Tc
ECCN Code :
EAR99
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 250μA
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
FET Type :
N-Channel
Reach Compliance Code :
not_compliant
Published :
2006
Pin Count :
4
Length :
16.05 mm
Surface Mount :
yes
Operating Temperature :
-55°C~175°C TJ
Drain to Source Voltage (Vdss) :
100V
Terminal Position :
Single
Number of Pins :
3
Subcategory :
MOSFETs
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
RoHS :
Details
Terminal Form :
Gull wing
Terminal Finish :
Matte Tin (Sn)
Mounting Style :
SMD/SMT
FET Feature :
--
Number of Terminations :
2
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package :
TO-268
Product Status :
Active
Brand :
IXYS
Number of Elements :
1
Height :
5.1 mm
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
JESD-609 Code :
e3
Pbfree Code :
yes
Base Product Number :
IXTT110
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Series :
PolarHT™
Maximum Operating Temperature :
+ 175 C
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
100V
Transistor Polarity :
N-Channel
Mount :
Surface Mount
Number of Channels :
1 Channel
Datasheets
IXTT110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, IXTT110N10P pinout, IXTT110N10P datasheet PDF, IXTT110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT110N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.Peak drain current for this device is 250A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 250A.
a 100V drain to source voltage (Vdss)


IXTT110N10P Applications


There are a lot of IXYS
IXTT110N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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