IXTT110N10P

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Mfr.Part #
IXTT110N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO268
Stock
15,411
In Stock :
15,411

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
100V
Operating Temperature :
-55°C~175°C TJ
Subcategory :
MOSFETs
Rise Time :
25 ns
Supplier Device Package :
TO-268
Transistor Type :
1 N-Channel
Pin Count :
4
Case Connection :
DRAIN
Mounting Style :
SMD/SMT
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
100V
Mount :
Surface Mount
Power Dissipation (Max) :
480W (Tc)
Series :
PolarHT™
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
JESD-30 Code :
R-PSSO-G2
Channel Mode :
Enhancement
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
Surface Mount :
yes
Power Dissipation-Max :
480W Tc
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Transistor Application :
SWITCHING
Packaging :
Tube
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Manufacturer :
IXYS
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.015Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
14 mm
Pbfree Code :
yes
Product Category :
MOSFET
Continuous Drain Current (ID) :
110A
Transistor Polarity :
N-Channel
Number of Terminals :
2
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Terminal Finish :
Matte Tin (Sn)
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
2
Package Shape :
RECTANGULAR
JESD-609 Code :
e3
Reach Compliance Code :
not_compliant
Base Product Number :
IXTT110
Length :
16.05 mm
Avalanche Energy Rating (Eas) :
1000 mJ
Product Type :
MOSFET
Terminal Position :
Single
Height :
5.1 mm
FET Feature :
--
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Published :
2006
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS :
Details
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
JEDEC-95 Code :
TO-268AA
Pulsed Drain Current-Max (IDM) :
250A
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Maximum Operating Temperature :
+ 175 C
Number of Pins :
3
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXTT110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Pins:3, Mounting Type:Surface Mount, IXTT110N10P pinout, IXTT110N10P datasheet PDF, IXTT110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT110N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.Peak drain current for this device is 250A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 250A.
a 100V drain to source voltage (Vdss)


IXTT110N10P Applications


There are a lot of IXYS
IXTT110N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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