IXTT110N10P

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Mfr.Part #
IXTT110N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO268
Stock
15,411
In Stock :
15,411

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Height :
5.1 mm
Qualification Status :
Not Qualified
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Supplier Device Package :
TO-268
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Pulsed Drain Current-Max (IDM) :
250A
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
480W (Tc)
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Terminations :
2
Pbfree Code :
yes
JEDEC-95 Code :
TO-268AA
Product Status :
Active
Reach Compliance Code :
not_compliant
FET Feature :
--
Series :
PolarHT™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
480W Tc
Maximum Operating Temperature :
+ 175 C
Length :
16.05 mm
Transistor Element Material :
SILICON
Number of Channels :
1 Channel
Width :
14 mm
Number of Elements :
1
Mount :
Surface Mount
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Packaging :
Tube
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
1000 mJ
Terminal Finish :
Matte Tin (Sn)
Drain-source On Resistance-Max :
0.015Ohm
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
ECCN Code :
EAR99
Channel Mode :
Enhancement
Product Category :
MOSFET
Published :
2006
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminals :
2
Mounting Style :
SMD/SMT
Transistor Polarity :
N-Channel
Pin Count :
4
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
100V
Base Product Number :
IXTT110
Continuous Drain Current (ID) :
110A
DS Breakdown Voltage-Min :
100V
Rise Time :
25 ns
Case Connection :
DRAIN
Operating Temperature :
-55°C~175°C TJ
Subcategory :
MOSFETs
Datasheets
IXTT110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Pins:3, Number of Terminations:2, Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IXTT110N10P pinout, IXTT110N10P datasheet PDF, IXTT110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT110N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.Peak drain current for this device is 250A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 250A.
a 100V drain to source voltage (Vdss)


IXTT110N10P Applications


There are a lot of IXYS
IXTT110N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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