IXTT110N10P

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Mfr.Part #
IXTT110N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO268
Stock
15,411
In Stock :
15,411

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Packaging :
Tube
Power Dissipation-Max :
480W Tc
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Brand :
IXYS
DS Breakdown Voltage-Min :
100V
Surface Mount :
yes
JESD-30 Code :
R-PSSO-G2
Mounting Style :
SMD/SMT
FET Feature :
--
Number of Terminations :
2
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 175 C
Manufacturer :
IXYS
Base Product Number :
IXTT110
Height :
5.1 mm
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
Length :
16.05 mm
Supplier Device Package :
TO-268
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
3
RoHS :
Details
Product Category :
MOSFET
Continuous Drain Current (ID) :
110A
Rise Time :
25 ns
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
250A
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Polarity :
N-Channel
Number of Terminals :
2
JEDEC-95 Code :
TO-268AA
Avalanche Energy Rating (Eas) :
1000 mJ
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.015Ohm
Width :
14 mm
Vgs (Max) :
±20V
Pin Count :
4
Case Connection :
DRAIN
Power Dissipation (Max) :
480W (Tc)
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Channel Mode :
Enhancement
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PolarHT™
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Terminal Form :
Gull wing
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Published :
2006
Package :
Tube
Vgs(th) (Max) @ Id :
5V @ 250μA
Reach Compliance Code :
not_compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Subcategory :
MOSFETs
Datasheets
IXTT110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, IXTT110N10P pinout, IXTT110N10P datasheet PDF, IXTT110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT110N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.Peak drain current for this device is 250A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 250A.
a 100V drain to source voltage (Vdss)


IXTT110N10P Applications


There are a lot of IXYS
IXTT110N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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