IXTT110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSSO-G2

Series :

PolarHT™

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

250A

Number of Elements :

1

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

5.1 mm

Terminal Finish :

Matte Tin (Sn)

Subcategory :

MOSFETs

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Supplier Device Package :

TO-268

Power Dissipation-Max :

480W Tc

Additional Feature :

AVALANCHE RATED

Mounting Style :

SMD/SMT

Packaging :

Tube

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Terminals :

2

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

110A

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100V

Terminal Form :

Gull wing

Published :

2006

Vgs(th) (Max) @ Id :

5V @ 250μA

Maximum Operating Temperature :

+ 175 C

Mount :

Surface Mount

Number of Pins :

3

Rise Time :

25 ns

Length :

16.05 mm

Drain-source On Resistance-Max :

0.015Ohm

Product Category :

MOSFET

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Product Status :

Active

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Brand :

IXYS

Power Dissipation (Max) :

480W (Tc)

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Base Product Number :

IXTT110

Surface Mount :

yes

JEDEC-95 Code :

TO-268AA

Avalanche Energy Rating (Eas) :

1000 mJ

Width :

14 mm

Package :

Tube