IXTT110N10P

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Mfr.Part #
IXTT110N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO268
Stock
15,411
In Stock :
15,411

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
480W (Tc)
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
1000 mJ
Product Type :
MOSFET
Terminal Form :
Gull wing
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Number of Elements :
1
Pin Count :
4
Pulsed Drain Current-Max (IDM) :
250A
DS Breakdown Voltage-Min :
100V
Operating Temperature :
-55°C~175°C TJ
RoHS :
Details
Transistor Application :
SWITCHING
Rise Time :
25 ns
Number of Channels :
1 Channel
JESD-30 Code :
R-PSSO-G2
Product Status :
Active
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
Reach Compliance Code :
not_compliant
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
JESD-609 Code :
e3
Pbfree Code :
yes
Brand :
IXYS
Product Category :
MOSFET
FET Type :
N-Channel
Terminal Position :
Single
Width :
14 mm
JEDEC-95 Code :
TO-268AA
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Number of Pins :
3
Continuous Drain Current (ID) :
110A
Transistor Polarity :
N-Channel
Height :
5.1 mm
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Subcategory :
MOSFETs
Number of Terminals :
2
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.015Ohm
Series :
PolarHT™
Maximum Operating Temperature :
+ 175 C
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
100V
Length :
16.05 mm
Published :
2006
Base Product Number :
IXTT110
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
Power Dissipation-Max :
480W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-268
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Mount :
Surface Mount
Mounting Style :
SMD/SMT
Mounting Type :
Surface Mount
Datasheets
IXTT110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, IXTT110N10P pinout, IXTT110N10P datasheet PDF, IXTT110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT110N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.Peak drain current for this device is 250A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 250A.
a 100V drain to source voltage (Vdss)


IXTT110N10P Applications


There are a lot of IXYS
IXTT110N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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