IXTT110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

16.05 mm

Manufacturer :

IXYS

Base Product Number :

IXTT110

FET Type :

N-Channel

JEDEC-95 Code :

TO-268AA

Number of Channels :

1 Channel

Terminal Finish :

Matte Tin (Sn)

Supplier Device Package :

TO-268

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

RoHS :

Details

Case Connection :

DRAIN

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Series :

PolarHT™

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain-source On Resistance-Max :

0.015Ohm

Product Status :

Active

Qualification Status :

Not Qualified

Package :

Tube

Channel Mode :

Enhancement

Rise Time :

25 ns

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 175 C

Mounting Style :

SMD/SMT

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

ECCN Code :

EAR99

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Packaging :

Tube

Transistor Type :

1 N-Channel

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Power Dissipation (Max) :

480W (Tc)

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Product Type :

MOSFET

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Feature :

--

Number of Terminals :

2

Brand :

IXYS

Power Dissipation-Max :

480W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

5.1 mm

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Transistor Application :

SWITCHING

Number of Terminations :

2

Terminal Position :

Single

Width :

14 mm

Avalanche Energy Rating (Eas) :

1000 mJ

DS Breakdown Voltage-Min :

100V

Additional Feature :

AVALANCHE RATED

Minimum Operating Temperature :

- 55 C

Terminal Form :

Gull wing

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

250A

Continuous Drain Current (ID) :

110A

Subcategory :

MOSFETs