IXTT110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Power Dissipation-Max :

480W Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Brand :

IXYS

DS Breakdown Voltage-Min :

100V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Style :

SMD/SMT

FET Feature :

--

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 175 C

Manufacturer :

IXYS

Base Product Number :

IXTT110

Height :

5.1 mm

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Length :

16.05 mm

Supplier Device Package :

TO-268

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

RoHS :

Details

Product Category :

MOSFET

Continuous Drain Current (ID) :

110A

Rise Time :

25 ns

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

250A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Transistor Polarity :

N-Channel

Number of Terminals :

2

JEDEC-95 Code :

TO-268AA

Avalanche Energy Rating (Eas) :

1000 mJ

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.015Ohm

Width :

14 mm

Vgs (Max) :

±20V

Pin Count :

4

Case Connection :

DRAIN

Power Dissipation (Max) :

480W (Tc)

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PolarHT™

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Form :

Gull wing

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Published :

2006

Package :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

not_compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Subcategory :

MOSFETs