IXTT10P50
- Mfr.Part #
- IXTT10P50
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 10A TO268
- Stock
- 44,305
- In Stock :
- 44,305
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 10A
- Terminal Form :
- Gull wing
- Rise Time :
- 27ns
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Number of Elements :
- 1
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Packaging :
- Bulk
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Series :
- --
- Power Dissipation (Max) :
- 300W (Tc)
- Supplier Device Package :
- TO-268
- Drain-source On Resistance-Max :
- 0.9Ohm
- Terminal Finish :
- Matte Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 40A
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Box
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-268AA
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Turn-Off Delay Time :
- 35 ns
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 5A, 10V
- Product Status :
- Active
- Mount :
- Surface Mount
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 2
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 10 A
- Element Configuration :
- Single
- FET Type :
- P-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Breakdown Voltage :
- -500V
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Manufacturer :
- IXYS Corporation
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Power Dissipation-Max (Abs) :
- 300 W
- Fall Time (Typ) :
- 35 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 500V
- Pin Count :
- 4
- Published :
- 2002
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 300W Tc
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300W
- Polarity/Channel Type :
- P-Channel
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXTT10
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXTT10P50

P-Channel Bulk 900m Ω @ 5A, 10V ±20V 4700pF @ 25V 160nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT10P50 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of -500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -500V.10 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Peak drain current for this device is 40A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTT10P50 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 40A.
a 500V drain to source voltage (Vdss)
IXTT10P50 Applications
There are a lot of IXYS
IXTT10P50 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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