IXTT10P50

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Mfr.Part #
IXTT10P50
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 500V 10A TO268
Stock
44,305
In Stock :
44,305

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
10A
Terminal Form :
Gull wing
Rise Time :
27ns
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Number of Elements :
1
Terminal Position :
Single
Case Connection :
DRAIN
Packaging :
Bulk
JESD-609 Code :
e3
Additional Feature :
AVALANCHE RATED
Series :
--
Power Dissipation (Max) :
300W (Tc)
Supplier Device Package :
TO-268
Drain-source On Resistance-Max :
0.9Ohm
Terminal Finish :
Matte Tin (Sn)
Pulsed Drain Current-Max (IDM) :
40A
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Package :
Box
Number of Terminations :
2
JEDEC-95 Code :
TO-268AA
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Turn-Off Delay Time :
35 ns
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
900m Ω @ 5A, 10V
Product Status :
Active
Mount :
Surface Mount
Surface Mount :
yes
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Number of Terminals :
2
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
10 A
Element Configuration :
Single
FET Type :
P-Channel
DS Breakdown Voltage-Min :
500 V
Drain to Source Breakdown Voltage :
-500V
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PSSO-G2
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Manufacturer :
IXYS Corporation
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Power Dissipation-Max (Abs) :
300 W
Fall Time (Typ) :
35 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain to Source Voltage (Vdss) :
500V
Pin Count :
4
Published :
2002
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Transistor Application :
SWITCHING
Power Dissipation-Max :
300W Tc
RoHS Status :
ROHS3 Compliant
Power Dissipation :
300W
Polarity/Channel Type :
P-Channel
Qualification Status :
Not Qualified
Base Product Number :
IXTT10
Operating Temperature :
-55°C~150°C TJ
Datasheets
IXTT10P50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT10P50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXTT10P50 pinout, IXTT10P50 datasheet PDF, IXTT10P50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT10P50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT10P50


P-Channel Bulk 900m Ω @ 5A, 10V ±20V 4700pF @ 25V 160nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT10P50 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of -500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -500V.10 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Peak drain current for this device is 40A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT10P50 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 40A.
a 500V drain to source voltage (Vdss)


IXTT10P50 Applications


There are a lot of IXYS
IXTT10P50 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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