IXTT02N450HV

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 25V

Turn-Off Delay Time :

28 ns

Number of Elements :

1

Product Category :

MOSFET

Min Operating Temperature :

-55 °C

Supplier Device Package :

TO-268

Surface Mount :

yes

Packaging :

Tube

Max Power Dissipation :

113 W

Number of Channels :

1 Channel

Package :

Tube

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.2A

Channel Mode :

Enhancement

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

4500V

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation :

113W

Factory Lead Time :

24 Weeks

Number of Terminals :

2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Pulsed Drain Current-Max (IDM) :

0.6A

Terminal Finish :

Matte Tin (Sn)

Rise Time :

48ns

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

2

Vgs(th) (Max) @ Id :

6.5V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

113W Tc

Fall Time (Typ) :

143 ns

Mounting Style :

SMD/SMT

FET Feature :

--

Power Dissipation-Max (Abs) :

113 W

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Published :

2012

Brand :

IXYS

Continuous Drain Current (ID) :

200mA

Drain to Source Resistance :

750 Ω

Rds On Max :

750 Ω

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

- 55 C

Case Connection :

DRAIN

Mount :

Surface Mount

Product Status :

Active

DS Breakdown Voltage-Min :

4500 V

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

RoHS :

Compliant

Input Capacitance :

256 pF

Drain to Source Breakdown Voltage :

4.5kV

Rds On (Max) @ Id, Vgs :

750 Ω @ 10mA, 10V

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-268AA

Configuration :

Single

FET Type :

N-Channel

Drain-source On Resistance-Max :

625Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

113W (Tc)

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSSO-G2

Manufacturer :

IXYS

Max Operating Temperature :

150 °C

Base Product Number :

IXTT02

JESD-609 Code :

e3

Series :

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