IXTT02N450HV

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

24 Weeks

Pulsed Drain Current-Max (IDM) :

0.6A

JESD-609 Code :

e3

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

6.5V @ 250μA

Rise Time :

48ns

Supplier Device Package :

TO-268

Manufacturer :

IXYS

Polarity/Channel Type :

N-Channel

Series :

--

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Drain to Source Voltage (Vdss) :

4500V

Base Product Number :

IXTT02

Terminal Finish :

Matte Tin (Sn)

Number of Terminals :

2

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

200mA

Maximum Operating Temperature :

+ 150 C

Terminal Position :

Single

Product Status :

Active

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Fall Time (Typ) :

143 ns

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Reach Compliance Code :

not_compliant

RoHS :

Compliant

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Power Dissipation :

113W

Max Operating Temperature :

150 °C

Package :

Tube

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

4500 V

Input Capacitance :

256 pF

Power Dissipation-Max :

113W Tc

Product Type :

MOSFET

Channel Mode :

Enhancement

Element Configuration :

Single

Published :

2012

Drain-source On Resistance-Max :

625Ohm

Minimum Operating Temperature :

- 55 C

Number of Terminations :

2

JEDEC-95 Code :

TO-268AA

Power Dissipation-Max (Abs) :

113 W

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 25V

Drain to Source Resistance :

750 Ω

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

FET Type :

N-Channel

Brand :

IXYS

Power Dissipation (Max) :

113W (Tc)

Max Power Dissipation :

113 W

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

0.2A

Drain to Source Breakdown Voltage :

4.5kV

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Min Operating Temperature :

-55 °C

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

SMD/SMT

Turn-Off Delay Time :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

750 Ω @ 10mA, 10V

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

750 Ω

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

Configuration :

Single