IXTT02N450HV

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Mfr.Part #
IXTT02N450HV
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 4500V 200MA TO268
Stock
944
In Stock :
944

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature :
150 °C
Mounting Style :
SMD/SMT
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
750 Ω @ 10mA, 10V
JESD-609 Code :
e3
FET Feature :
--
Number of Channels :
1 Channel
Configuration :
Single
Packaging :
Tube
Vgs (Max) :
±20V
Surface Mount :
yes
Drain-source On Resistance-Max :
625Ohm
Gate Charge (Qg) (Max) @ Vgs :
10.4nC @ 10V
JEDEC-95 Code :
TO-268AA
Factory Lead Time :
24 Weeks
Power Dissipation-Max (Abs) :
113 W
Brand :
IXYS
Base Product Number :
IXTT02
Terminal Finish :
Matte Tin (Sn)
Product Category :
MOSFET
Transistor Application :
SWITCHING
Power Dissipation :
113W
Fall Time (Typ) :
143 ns
Vgs(th) (Max) @ Id :
6.5V @ 250μA
Supplier Device Package :
TO-268
Rds On Max :
750 Ω
Manufacturer :
IXYS
Product Type :
MOSFET
DS Breakdown Voltage-Min :
4500 V
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Min Operating Temperature :
-55 °C
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Power Dissipation (Max) :
113W (Tc)
Input Capacitance :
256 pF
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
28 ns
Power Dissipation-Max :
113W Tc
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Number of Terminals :
2
Package :
Tube
Product Status :
Active
Published :
2012
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 150 C
Case Connection :
DRAIN
Rise Time :
48ns
Number of Terminations :
2
Drain to Source Voltage (Vdss) :
4500V
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
256pF @ 25V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RoHS :
Compliant
Polarity/Channel Type :
N-Channel
Drain Current-Max (Abs) (ID) :
0.2A
Drain to Source Breakdown Voltage :
4.5kV
Max Power Dissipation :
113 W
Terminal Form :
Gull wing
Series :
--
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Pulsed Drain Current-Max (IDM) :
0.6A
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Reach Compliance Code :
not_compliant
Drain to Source Resistance :
750 Ω
Continuous Drain Current (ID) :
200mA
Transistor Type :
1 N-Channel
FET Type :
N-Channel
Datasheets
IXTT02N450HV
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT02N450HV from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, IXTT02N450HV pinout, IXTT02N450HV datasheet PDF, IXTT02N450HV amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT02N450HV ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT02N450HV


N-Channel Tube 750 Ω @ 10mA, 10V ±20V 256pF @ 25V 10.4nC @ 10V 4500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT02N450HV Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 256pF @ 25V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=4.5kV, the drain-source breakdown voltage is 4.5kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28 ns.A maximum pulsed drain current of 0.6A is the maximum peak drain current rated for this device.MOSFETs have 750 Ω resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 4500 V.In order to operate this transistor, a voltage of 4500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTT02N450HV Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 4.5kV voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.6A.
single MOSFETs transistor is 750 Ω
a 4500V drain to source voltage (Vdss)


IXTT02N450HV Applications


There are a lot of IXYS
IXTT02N450HV applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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