IXTT02N450HV
- Mfr.Part #
- IXTT02N450HV
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 4500V 200MA TO268
- Stock
- 944
- In Stock :
- 944
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 256pF @ 25V
- Turn-Off Delay Time :
- 28 ns
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Min Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-268
- Surface Mount :
- yes
- Packaging :
- Tube
- Max Power Dissipation :
- 113 W
- Number of Channels :
- 1 Channel
- Package :
- Tube
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Channel Mode :
- Enhancement
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 4500V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Power Dissipation :
- 113W
- Factory Lead Time :
- 24 Weeks
- Number of Terminals :
- 2
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Pulsed Drain Current-Max (IDM) :
- 0.6A
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 48ns
- Transistor Polarity :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 6.5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 113W Tc
- Fall Time (Typ) :
- 143 ns
- Mounting Style :
- SMD/SMT
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 113 W
- Gate Charge (Qg) (Max) @ Vgs :
- 10.4nC @ 10V
- Published :
- 2012
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 200mA
- Drain to Source Resistance :
- 750 Ω
- Rds On Max :
- 750 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Product Status :
- Active
- DS Breakdown Voltage-Min :
- 4500 V
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Compliant
- Input Capacitance :
- 256 pF
- Drain to Source Breakdown Voltage :
- 4.5kV
- Rds On (Max) @ Id, Vgs :
- 750 Ω @ 10mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Reach Compliance Code :
- not_compliant
- JEDEC-95 Code :
- TO-268AA
- Configuration :
- Single
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 625Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 113W (Tc)
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer :
- IXYS
- Max Operating Temperature :
- 150 °C
- Base Product Number :
- IXTT02
- JESD-609 Code :
- e3
- Series :
- --
- Datasheets
- IXTT02N450HV

N-Channel Tube 750 Ω @ 10mA, 10V ±20V 256pF @ 25V 10.4nC @ 10V 4500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT02N450HV Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 256pF @ 25V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=4.5kV, the drain-source breakdown voltage is 4.5kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28 ns.A maximum pulsed drain current of 0.6A is the maximum peak drain current rated for this device.MOSFETs have 750 Ω resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 4500 V.In order to operate this transistor, a voltage of 4500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTT02N450HV Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 4.5kV voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.6A.
single MOSFETs transistor is 750 Ω
a 4500V drain to source voltage (Vdss)
IXTT02N450HV Applications
There are a lot of IXYS
IXTT02N450HV applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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