IXTT10P60
- Mfr.Part #
- IXTT10P60
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 600V 10A TO268
- Stock
- 13,080
- In Stock :
- 13,080
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Product Status :
- Active
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXTT10
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Published :
- 2012
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 1Ohm
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 10A
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- P-Channel
- FET Feature :
- --
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Factory Lead Time :
- 24 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- --
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 5A, 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 40A
- JESD-30 Code :
- R-PSSO-G2
- Supplier Device Package :
- TO-268
- Product Type :
- MOSFET
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 300W Tc
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Channel Mode :
- Enhancement
- Pin Count :
- 4
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- IXTT10P60

P-Channel Tube 1 Ω @ 5A, 10V ±20V 4700pF @ 25V 160nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT10P60 Overview
A device's maximal input capacitance is 4700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTT10P60 Features
a continuous drain current (ID) of 10A
based on its rated peak drain current 40A.
a 600V drain to source voltage (Vdss)
IXTT10P60 Applications
There are a lot of IXYS
IXTT10P60 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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