IXTT10N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Case Connection :

DRAIN

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

400 W

Drain to Source Breakdown Voltage :

1kV

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

16.05 mm

Continuous Drain Current (ID) :

10A

Gate to Source Voltage (Vgs) :

30V

Rise Time :

85ns

Fall Time (Typ) :

75 ns

Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

Pin Count :

4

JEDEC-95 Code :

TO-268AA

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Type :

High Voltage MOSFET

Series :

--

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

SMD/SMT

Number of Elements :

1

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Length :

14 mm

FET Feature :

Depletion Mode

Power Dissipation :

400W

Base Product Number :

IXTT10

Number of Channels :

1 Channel

Brand :

IXYS

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Package :

Tube

Turn-Off Delay Time :

110 ns

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 10A, 10V

Transistor Polarity :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

20A

Supplier Device Package :

TO-268

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

400W Tc

Product Category :

MOSFET

Channel Mode :

Depletion

Transistor Type :

1 N-Channel

Number of Terminals :

2

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Product Status :

Active

Packaging :

Tube

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

1000V

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Published :

2009

FET Type :

N-Channel

Factory Lead Time :

24 Weeks

Drain Current-Max (Abs) (ID) :

10 A

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

1000 V

Drain-source On Resistance-Max :

1.4 Ω

Mounting Type :

Surface Mount

Power Dissipation (Max) :

400W (Tc)

Height :

5.1 mm

Qualification Status :

Not Qualified