IXTT10N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Type :

High Voltage MOSFET

Published :

2009

FET Feature :

Depletion Mode

Package :

Tube

Height :

5.1 mm

Gate to Source Voltage (Vgs) :

30V

RoHS :

Details

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Number of Elements :

1

Mounting Type :

Surface Mount

Maximum Operating Temperature :

+ 150 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

400W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Pulsed Drain Current-Max (IDM) :

20A

Manufacturer :

IXYS

Length :

14 mm

Pbfree Code :

yes

Product Category :

MOSFET

Factory Lead Time :

24 Weeks

Turn-Off Delay Time :

110 ns

DS Breakdown Voltage-Min :

1000 V

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Case Connection :

DRAIN

Vgs (Max) :

±30V

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

10 A

Drain to Source Voltage (Vdss) :

1000V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Number of Terminals :

2

Qualification Status :

Not Qualified

Element Configuration :

Single

Drain to Source Breakdown Voltage :

1kV

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 10A, 10V

Number of Terminations :

2

Base Product Number :

IXTT10

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Power Dissipation (Max) :

400W (Tc)

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Brand :

IXYS

Channel Mode :

Depletion

Package Shape :

RECTANGULAR

Rise Time :

85ns

Series :

--

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

JEDEC-95 Code :

TO-268AA

Mounting Style :

SMD/SMT

Configuration :

Single

Power Dissipation-Max :

400W Tc

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

400 W

Supplier Device Package :

TO-268

Transistor Application :

SWITCHING

Product Type :

MOSFET

Drain-source On Resistance-Max :

1.4 Ω

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Fall Time (Typ) :

75 ns

Width :

16.05 mm

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Packaging :

Tube

FET Type :

N-Channel

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

10A