IXTT10N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

--

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Brand :

IXYS

Mount :

Surface Mount

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

400 W

JEDEC-95 Code :

TO-268AA

Drain-source On Resistance-Max :

1.4 Ω

Transistor Element Material :

SILICON

RoHS :

Details

Power Dissipation :

400W

Supplier Device Package :

TO-268

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

1000V

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

400W Tc

Packaging :

Tube

Base Product Number :

IXTT10

Terminal Form :

Gull wing

Manufacturer :

IXYS

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Type :

MOSFET

JESD-609 Code :

e3

Number of Terminals :

2

Turn-Off Delay Time :

110 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Type :

High Voltage MOSFET

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Drain Current-Max (Abs) (ID) :

10 A

Width :

16.05 mm

Product Category :

MOSFET

Terminal Finish :

Matte Tin (Sn)

Configuration :

Single

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Factory Lead Time :

24 Weeks

Qualification Status :

Not Qualified

Pin Count :

4

Channel Mode :

Depletion

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

10A

Length :

14 mm

Number of Channels :

1 Channel

Package :

Tube

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Published :

2009

DS Breakdown Voltage-Min :

1000 V

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Mounting Style :

SMD/SMT

Height :

5.1 mm

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

400W (Tc)

Transistor Application :

SWITCHING

Rise Time :

85ns

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 10A, 10V

Transistor Type :

1 N-Channel

Number of Terminations :

2

Element Configuration :

Single

Drain to Source Breakdown Voltage :

1kV

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

75 ns

Transistor Polarity :

N-Channel

Product Status :

Active

FET Feature :

Depletion Mode

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED