IXTT10N100D
- Mfr.Part #
- IXTT10N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 10A TO268
- Stock
- 27,988
- In Stock :
- 27,988
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- --
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Brand :
- IXYS
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Power Dissipation-Max (Abs) :
- 400 W
- JEDEC-95 Code :
- TO-268AA
- Drain-source On Resistance-Max :
- 1.4 Ω
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Power Dissipation :
- 400W
- Supplier Device Package :
- TO-268
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 1000V
- FET Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 400W Tc
- Packaging :
- Tube
- Base Product Number :
- IXTT10
- Terminal Form :
- Gull wing
- Manufacturer :
- IXYS
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Product Type :
- MOSFET
- JESD-609 Code :
- e3
- Number of Terminals :
- 2
- Turn-Off Delay Time :
- 110 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Type :
- High Voltage MOSFET
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 10 A
- Width :
- 16.05 mm
- Product Category :
- MOSFET
- Terminal Finish :
- Matte Tin (Sn)
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Factory Lead Time :
- 24 Weeks
- Qualification Status :
- Not Qualified
- Pin Count :
- 4
- Channel Mode :
- Depletion
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 10A
- Length :
- 14 mm
- Number of Channels :
- 1 Channel
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2009
- DS Breakdown Voltage-Min :
- 1000 V
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 20A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Mounting Style :
- SMD/SMT
- Height :
- 5.1 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 400W (Tc)
- Transistor Application :
- SWITCHING
- Rise Time :
- 85ns
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 10A, 10V
- Transistor Type :
- 1 N-Channel
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 1kV
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 75 ns
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- FET Feature :
- Depletion Mode
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTT10N100D

N-Channel Tube 1.4 Ω @ 10A, 10V ±30V 2500pF @ 25V 130nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT10N100D Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 20A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTT10N100D Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)
IXTT10N100D Applications
There are a lot of IXYS
IXTT10N100D applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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