IXTT8P50

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Mfr.Part #
IXTT8P50
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 500V 8A TO268
Stock
25,203
In Stock :
25,203

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e3
Terminal Finish :
PURE TIN
Transistor Application :
SWITCHING
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Continuous Drain Current (ID) :
8A
Base Product Number :
IXTT8
Subcategory :
MOSFETs
Reach Compliance Code :
Unknown
Configuration :
Single
Supplier Device Package :
TO-268
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Drain to Source Breakdown Voltage :
-500V
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Fall Time (Typ) :
35 ns
Drain to Source Voltage (Vdss) :
500V
Power Dissipation (Max) :
180W (Tc)
FET Type :
P-Channel
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Power Dissipation :
180W
Factory Lead Time :
24 Weeks
Transistor Polarity :
P-Channel
Pbfree Code :
yes
Product Type :
MOSFET
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
27ns
Rds On (Max) @ Id, Vgs :
1.2 Ω @ 4A, 10V
Turn-Off Delay Time :
35 ns
Power Dissipation-Max :
180W Tc
Pulsed Drain Current-Max (IDM) :
32A
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
3400pF @ 25V
Number of Channels :
1 Channel
Width :
14 mm
Number of Terminations :
2
Packaging :
Tube
Transistor Type :
1 P-Channel
Height :
5.1 mm
Series :
--
JESD-30 Code :
R-PSSO-G2
Published :
2005
Maximum Operating Temperature :
+ 150 C
Case Connection :
DRAIN
Channel Mode :
Enhancement
Drain Current-Max (Abs) (ID) :
8A
Product Category :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
16.05 mm
Pin Count :
4
Package :
Tube
Product Status :
Active
Gate to Source Voltage (Vgs) :
20V
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
5V @ 250μA
Brand :
IXYS
Datasheets
IXTT8P50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT8P50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, IXTT8P50 pinout, IXTT8P50 datasheet PDF, IXTT8P50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT8P50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT8P50


P-Channel Tube 1.2 Ω @ 4A, 10V ±20V 3400pF @ 25V 130nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT8P50 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -500V, and this device has a drainage-to-source breakdown voltage of -500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.Peak drain current is 32A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTT8P50 Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 32A.
a 500V drain to source voltage (Vdss)


IXTT8P50 Applications


There are a lot of IXYS
IXTT8P50 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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