IXTT88N30P
- Mfr.Part #
- IXTT88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO268
- Stock
- 1,747
- In Stock :
- 1,747
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 96 ns
- Radiation Hardening :
- No
- Maximum Operating Temperature :
- + 150 C
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 300V
- RoHS :
- Details
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 300V
- Terminal Position :
- Single
- Configuration :
- Single
- Base Product Number :
- IXTT88
- Power Dissipation-Max :
- 600W Tc
- Width :
- 16.05 mm
- Channel Mode :
- Enhancement
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 88A
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 25 ns
- Factory Lead Time :
- 24 Weeks
- Product Category :
- MOSFET
- FET Feature :
- --
- Power Dissipation :
- 600W
- Surface Mount :
- yes
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Power Dissipation (Max) :
- 600W (Tc)
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.04Ohm
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±20V
- Series :
- PolarHT™
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 220A
- Type :
- PolarHT Power MOSFET
- Pbfree Code :
- yes
- Subcategory :
- MOSFETs
- DS Breakdown Voltage-Min :
- 300 V
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Length :
- 14 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-268
- Rise Time :
- 24ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Product Status :
- Active
- Height :
- 5.1 mm
- Tradename :
- PolarHT
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 2
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-268AA
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXTT88N30P

N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT88N30P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 88A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.It is [96 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 220A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTT88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
a 300V drain to source voltage (Vdss)
IXTT88N30P Applications
There are a lot of IXYS
IXTT88N30P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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