IXTT88N30P

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Mfr.Part #
IXTT88N30P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO268
Stock
1,747
In Stock :
1,747

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Package :
Tube
Lead Free :
Lead Free
Turn-Off Delay Time :
96 ns
Radiation Hardening :
No
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Elements :
1
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
300V
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Published :
2006
Drain to Source Voltage (Vdss) :
300V
Terminal Position :
Single
Configuration :
Single
Base Product Number :
IXTT88
Power Dissipation-Max :
600W Tc
Width :
16.05 mm
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Pin Count :
4
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
88A
Number of Terminations :
2
Fall Time (Typ) :
25 ns
Factory Lead Time :
24 Weeks
Product Category :
MOSFET
FET Feature :
--
Power Dissipation :
600W
Surface Mount :
yes
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Reach Compliance Code :
not_compliant
Power Dissipation (Max) :
600W (Tc)
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.04Ohm
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
Terminal Finish :
Matte Tin (Sn)
Vgs (Max) :
±20V
Series :
PolarHT™
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
220A
Type :
PolarHT Power MOSFET
Pbfree Code :
yes
Subcategory :
MOSFETs
DS Breakdown Voltage-Min :
300 V
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Length :
14 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Minimum Operating Temperature :
- 55 C
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Avalanche Energy Rating (Eas) :
2000 mJ
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-268
Rise Time :
24ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Transistor Application :
SWITCHING
Brand :
IXYS
Product Status :
Active
Height :
5.1 mm
Tradename :
PolarHT
Polarity/Channel Type :
N-Channel
Number of Terminals :
2
Manufacturer :
IXYS
JEDEC-95 Code :
TO-268AA
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mount :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXTT88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT88N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Type:PolarHT Power MOSFET, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXTT88N30P pinout, IXTT88N30P datasheet PDF, IXTT88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT88N30P


N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT88N30P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 88A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.It is [96 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 220A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTT88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
a 300V drain to source voltage (Vdss)


IXTT88N30P Applications


There are a lot of IXYS
IXTT88N30P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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