IXTT88N15
- Mfr.Part #
- IXTT88N15
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 88A TO268
- Stock
- 22,735
- In Stock :
- 22,735
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 88A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 400W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-268AA
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Supplier Device Package :
- TO-268
- Power Dissipation-Max :
- 400W Tc
- Series :
- --
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 44A, 10V
- Base Product Number :
- IXTT88
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 400W
- Published :
- 2003
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 18 ns
- Drain to Source Breakdown Voltage :
- 150V
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 352A
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Package :
- Box
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.022Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Drain to Source Voltage (Vdss) :
- 150V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 80 ns
- Package Shape :
- RECTANGULAR
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 150 V
- Number of Terminals :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Rise Time :
- 33ns
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Datasheets
- IXTT88N15

N-Channel Bulk 22m Ω @ 44A, 10V ±20V 4000pF @ 25V 170nC @ 10V 150V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT88N15 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 88A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 352A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTT88N15 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 352A.
a 150V drain to source voltage (Vdss)
IXTT88N15 Applications
There are a lot of IXYS
IXTT88N15 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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