IXTT75N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Product Status :

Active

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Terminal Position :

Single

Manufacturer :

IXYS

Rise Time :

14 ns

Factory Lead Time :

24 Weeks

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Case Connection :

DRAIN

ECCN Code :

EAR99

Base Product Number :

IXTT75

Continuous Drain Current (ID) :

75A

Avalanche Energy Rating (Eas) :

2500 mJ

Pulsed Drain Current-Max (IDM) :

225A

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Type :

MOSFET

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.021Ohm

Pin Count :

4

RoHS :

Compliant

FET Type :

N-Channel

Input Capacitance :

8.1 nF

Series :

Linear L2™

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

400 W

Rds On (Max) @ Id, Vgs :

21m Ω @ 500mA, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Brand :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Terminal Finish :

PURE TIN

Mounting Style :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation-Max :

400W Tc

Number of Pins :

3

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

8100pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Drain to Source Resistance :

21 mΩ

Rds On Max :

21 mΩ

Mount :

Surface Mount

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Unknown

Number of Channels :

1 Channel

Power Dissipation (Max) :

400W (Tc)

Package :

Tube

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Number of Terminations :

2

FET Feature :

--

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Supplier Device Package :

TO-268

Packaging :

Tube