IXTT75N10
- Mfr.Part #
- IXTT75N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO268
- Stock
- 44,838
- In Stock :
- 44,838
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 30 ns
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 2
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 300A
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Surface Mount :
- yes
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Published :
- 2003
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 37.5A, 10V
- Product Type :
- MOSFET
- Mounting Style :
- SMD/SMT
- JEDEC-95 Code :
- TO-268AA
- JESD-609 Code :
- e3
- Series :
- MegaMOS™
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Mount :
- Surface Mount
- Channel Mode :
- Enhancement
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 100 ns
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Tube
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-268AA
- Base Product Number :
- IXTT75
- Subcategory :
- MOSFETs
- Rise Time :
- 60ns
- Continuous Drain Current (ID) :
- 75A
- Drain to Source Voltage (Vdss) :
- 100 V
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 100 V
- Drain-source On Resistance-Max :
- 0.02Ohm
- Product Status :
- Active
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300W
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Brand :
- IXYS
- FET Feature :
- -
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 24 Weeks
- Drain to Source Breakdown Voltage :
- 100V
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTT75N10

N-Channel Tube 20m Ω @ 37.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT75N10 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100 V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTT75N10 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 100 V drain to source voltage (Vdss)
IXTT75N10 Applications
There are a lot of IXYS
IXTT75N10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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