IXTT75N10

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Mfr.Part #
IXTT75N10
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO268
Stock
44,838
In Stock :
44,838

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Pbfree Code :
yes
Fall Time (Typ) :
30 ns
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Number of Terminals :
2
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
300A
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Pin Count :
4
Surface Mount :
yes
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
JESD-30 Code :
R-PSSO-G2
ECCN Code :
EAR99
Published :
2003
Rds On (Max) @ Id, Vgs :
20m Ω @ 37.5A, 10V
Product Type :
MOSFET
Mounting Style :
SMD/SMT
JEDEC-95 Code :
TO-268AA
JESD-609 Code :
e3
Series :
MegaMOS™
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Mount :
Surface Mount
Channel Mode :
Enhancement
Terminal Form :
Gull wing
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
100 ns
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Power Dissipation-Max :
300W Tc
Supplier Device Package :
TO-268AA
Base Product Number :
IXTT75
Subcategory :
MOSFETs
Rise Time :
60ns
Continuous Drain Current (ID) :
75A
Drain to Source Voltage (Vdss) :
100 V
Vgs (Max) :
±20V
Element Configuration :
Single
DS Breakdown Voltage-Min :
100 V
Drain-source On Resistance-Max :
0.02Ohm
Product Status :
Active
Case Connection :
DRAIN
Manufacturer :
IXYS
Power Dissipation (Max) :
300W (Tc)
Number of Terminations :
2
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Power Dissipation :
300W
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Brand :
IXYS
FET Feature :
-
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
24 Weeks
Drain to Source Breakdown Voltage :
100V
Reach Compliance Code :
not_compliant
Vgs(th) (Max) @ Id :
4V @ 4mA
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXTT75N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT75N10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, IXTT75N10 pinout, IXTT75N10 datasheet PDF, IXTT75N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT75N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT75N10


N-Channel Tube 20m Ω @ 37.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT75N10 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100 V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTT75N10 Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 100 V drain to source voltage (Vdss)


IXTT75N10 Applications


There are a lot of IXYS
IXTT75N10 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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