IXTT74N20P

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Mfr.Part #
IXTT74N20P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 200V 74A TO268
Stock
43,855
In Stock :
43,855

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Tradename :
PolarHT
Published :
2006
Drain to Source Breakdown Voltage :
200V
Case Connection :
DRAIN
Package :
Tube
Width :
16.05 mm
Manufacturer :
IXYS
Supplier Device Package :
TO-268
Power Dissipation-Max :
480W Tc
Product Status :
Active
Type :
PolarHT Power MOSFET
Mounting Style :
SMD/SMT
Rise Time :
21ns
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
1000 mJ
Fall Time (Typ) :
21 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
200A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 175 C
Power Dissipation-Max (Abs) :
480 W
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Surface Mount :
yes
Vgs(th) (Max) @ Id :
5V @ 250μA
DS Breakdown Voltage-Min :
200 V
Transistor Application :
SWITCHING
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
74 A
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
74A Tc
Product Type :
MOSFET
Continuous Drain Current (ID) :
74A
Minimum Operating Temperature :
- 55 C
Height :
5.1 mm
Packaging :
Tube
Number of Channels :
1 Channel
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Terminal Finish :
Matte Tin (Sn)
JEDEC-95 Code :
TO-268AA
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Max) :
480W (Tc)
Configuration :
Single
Element Configuration :
Single
Series :
PolarHT™
Resistance :
34mOhm
Pbfree Code :
yes
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
34m Ω @ 37A, 10V
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
FET Feature :
--
Drain-source On Resistance-Max :
0.034 Ω
JESD-30 Code :
R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
2
ECCN Code :
EAR99
Lead Free :
Lead Free
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Base Product Number :
IXTT74
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
4
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 25V
Number of Elements :
1
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Terminal Form :
Gull wing
JESD-609 Code :
e3
Turn-Off Delay Time :
60 ns
Length :
14 mm
Power Dissipation :
400W
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
200V
Factory Lead Time :
24 Weeks
Datasheets
IXTT74N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT74N20P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT Power MOSFET, Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~175°C TJ, IXTT74N20P pinout, IXTT74N20P datasheet PDF, IXTT74N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT74N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT74N20P


N-Channel Tube 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT74N20P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT74N20P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)


IXTT74N20P Applications


There are a lot of IXYS
IXTT74N20P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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