IXTT74N20P
- Mfr.Part #
- IXTT74N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 74A TO268
- Stock
- 43,855
- In Stock :
- 43,855
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Tradename :
- PolarHT
- Published :
- 2006
- Drain to Source Breakdown Voltage :
- 200V
- Case Connection :
- DRAIN
- Package :
- Tube
- Width :
- 16.05 mm
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-268
- Power Dissipation-Max :
- 480W Tc
- Product Status :
- Active
- Type :
- PolarHT Power MOSFET
- Mounting Style :
- SMD/SMT
- Rise Time :
- 21ns
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Fall Time (Typ) :
- 21 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 200A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation-Max (Abs) :
- 480 W
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- DS Breakdown Voltage-Min :
- 200 V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Drain Current-Max (Abs) (ID) :
- 74 A
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 74A
- Minimum Operating Temperature :
- - 55 C
- Height :
- 5.1 mm
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- JEDEC-95 Code :
- TO-268AA
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Power Dissipation (Max) :
- 480W (Tc)
- Configuration :
- Single
- Element Configuration :
- Single
- Series :
- PolarHT™
- Resistance :
- 34mOhm
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.034 Ω
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminals :
- 2
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Base Product Number :
- IXTT74
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Number of Elements :
- 1
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 60 ns
- Length :
- 14 mm
- Power Dissipation :
- 400W
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 200V
- Factory Lead Time :
- 24 Weeks
- Datasheets
- IXTT74N20P

N-Channel Tube 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT74N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 74A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 74 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT74N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXTT74N20P Applications
There are a lot of IXYS
IXTT74N20P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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