IXTT72N20
- Mfr.Part #
- IXTT72N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 72A TO268
- Stock
- 46,070
- In Stock :
- 46,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 80 ns
- Height :
- 5.1 mm
- Continuous Drain Current (ID) :
- 72A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 400W (Tc)
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.033Ohm
- Power Dissipation :
- 400W
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 200V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- Length :
- 16.05 mm
- Surface Mount :
- yes
- Series :
- --
- Minimum Operating Temperature :
- - 55 C
- Transistor Element Material :
- SILICON
- Width :
- 14 mm
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- FET Type :
- N-Channel
- Pin Count :
- 4
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Rise Time :
- 30ns
- Mounting Style :
- SMD/SMT
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 288A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 200V
- Base Product Number :
- IXTT72
- JEDEC-95 Code :
- TO-268AA
- Power Dissipation-Max :
- 400W Tc
- DS Breakdown Voltage-Min :
- 200 V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Channel Mode :
- Enhancement
- Number of Terminations :
- 2
- Supplier Device Package :
- TO-268
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Subcategory :
- MOSFETs
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- 1 N-Channel
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 20 ns
- Number of Terminals :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Product Category :
- MOSFET
- Reach Compliance Code :
- Unknown
- Packaging :
- Tube
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Package :
- Tube
- Terminal Form :
- Gull wing
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2003
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTT72N20

N-Channel Tube 33m Ω @ 500mA, 10V ±20V 4400pF @ 25V 170nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT72N20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 72A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 288A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT72N20 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 288A.
a 200V drain to source voltage (Vdss)
IXTT72N20 Applications
There are a lot of IXYS
IXTT72N20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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