IXTT72N20

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Mfr.Part #
IXTT72N20
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 200V 72A TO268
Stock
46,070
In Stock :
46,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Pbfree Code :
yes
Turn-Off Delay Time :
80 ns
Height :
5.1 mm
Continuous Drain Current (ID) :
72A
Vgs(th) (Max) @ Id :
4V @ 250µA
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
400W (Tc)
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.033Ohm
Power Dissipation :
400W
Product Type :
MOSFET
Drain to Source Voltage (Vdss) :
200V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
Length :
16.05 mm
Surface Mount :
yes
Series :
--
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Width :
14 mm
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
FET Type :
N-Channel
Pin Count :
4
Configuration :
Single
Vgs (Max) :
±20V
Rise Time :
30ns
Mounting Style :
SMD/SMT
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Mount :
Surface Mount
Terminal Position :
Single
Brand :
IXYS
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
288A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
200V
Base Product Number :
IXTT72
JEDEC-95 Code :
TO-268AA
Power Dissipation-Max :
400W Tc
DS Breakdown Voltage-Min :
200 V
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Matte Tin (Sn)
Avalanche Energy Rating (Eas) :
1500 mJ
Channel Mode :
Enhancement
Number of Terminations :
2
Supplier Device Package :
TO-268
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Subcategory :
MOSFETs
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
1 N-Channel
ECCN Code :
EAR99
Fall Time (Typ) :
20 ns
Number of Terminals :
2
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Product Category :
MOSFET
Reach Compliance Code :
Unknown
Packaging :
Tube
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package :
Tube
Terminal Form :
Gull wing
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2003
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXTT72N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT72N20 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, IXTT72N20 pinout, IXTT72N20 datasheet PDF, IXTT72N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT72N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT72N20


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 4400pF @ 25V 170nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT72N20 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 72A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 288A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT72N20 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 288A.
a 200V drain to source voltage (Vdss)


IXTT72N20 Applications


There are a lot of IXYS
IXTT72N20 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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