IXTT72N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

400W (Tc)

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

ECCN Code :

EAR99

Series :

--

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Package Shape :

RECTANGULAR

Published :

2003

RoHS Status :

ROHS3 Compliant

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

288A

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

200V

Surface Mount :

yes

Supplier Device Package :

TO-268

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Subcategory :

MOSFETs

Transistor Type :

1 N-Channel

Number of Elements :

1

Number of Terminals :

2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

FET Feature :

--

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Mounting Style :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

72A

Brand :

IXYS

Power Dissipation :

400W

Avalanche Energy Rating (Eas) :

1500 mJ

Terminal Form :

Gull wing

Product Type :

MOSFET

Rise Time :

30ns

Vgs (Max) :

±20V

Base Product Number :

IXTT72

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

33m Ω @ 500mA, 10V

Configuration :

Single

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Status :

Active

Pin Count :

4

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.033Ohm

JEDEC-95 Code :

TO-268AA

Length :

16.05 mm

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

200V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

200 V

Mount :

Surface Mount

Turn-Off Delay Time :

80 ns

Height :

5.1 mm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Case Connection :

DRAIN

Width :

14 mm

Element Configuration :

Single

Power Dissipation-Max :

400W Tc