IXTT6N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Resistance :

2.6MOhm

Current - Continuous Drain (Id) @ 25°C :

6A Tc

JESD-609 Code :

e3

Height :

5.1 mm

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Channels :

1 Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 3A, 10V

RoHS :

Compliant

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

24A

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-268

Turn-Off Delay Time :

42 ns

Brand :

IXYS

JESD-30 Code :

R-PSSO-G2

Drain to Source Resistance :

2.4 Ω

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Input Capacitance :

1.95 nF

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

SMD/SMT

Max Power Dissipation :

300 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Factory Lead Time :

24 Weeks

Pin Count :

4

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Max Operating Temperature :

150 °C

Power Dissipation :

300W

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

300W (Tc)

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

1200V

Package :

Box

Pbfree Code :

yes

Rds On Max :

2.6 Ω

Transistor Application :

SWITCHING

Subcategory :

MOSFETs

Length :

14 mm

Mount :

Surface Mount

Configuration :

Single

Manufacturer :

IXYS

Number of Elements :

1

Element Configuration :

Single

Base Product Number :

IXTT6

Type :

High Voltage Power MOSFET

Drain Current-Max (Abs) (ID) :

6A

FET Feature :

--

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

33ns

Lead Free :

Lead Free

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

500 mJ

Width :

16.05 mm

Transistor Element Material :

SILICON

Number of Terminations :

2

Min Operating Temperature :

-55 °C

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Drain to Source Breakdown Voltage :

1.2kV

Series :

--

Product Type :

MOSFET

Case Connection :

DRAIN

Published :

2004

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

300W Tc