IXTT6N120

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Mfr.Part #
IXTT6N120
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1200V 6A TO268
Stock
267
In Stock :
267

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Base Product Number :
IXTT6
RoHS :
Compliant
Fall Time (Typ) :
18 ns
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 25V
Max Operating Temperature :
150 °C
Power Dissipation :
300W
Number of Elements :
1
ECCN Code :
EAR99
Length :
14 mm
Rds On Max :
2.6 Ω
Manufacturer :
IXYS
Product Type :
MOSFET
Package :
Box
Terminal Finish :
Matte Tin (Sn)
Vgs (Max) :
±20V
Subcategory :
MOSFETs
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
FET Feature :
--
FET Type :
N-Channel
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
5V @ 250μA
Mount :
Surface Mount
Packaging :
Tube
Power Dissipation (Max) :
300W (Tc)
Pulsed Drain Current-Max (IDM) :
24A
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
Resistance :
2.6MOhm
Published :
2004
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Height :
5.1 mm
Continuous Drain Current (ID) :
6A
Case Connection :
DRAIN
Mounting Style :
SMD/SMT
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55 °C
Turn-Off Delay Time :
42 ns
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
1.2kV
Transistor Type :
1 N-Channel
Width :
16.05 mm
Type :
High Voltage Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
300W Tc
Number of Channels :
1 Channel
Pin Count :
4
Drain to Source Resistance :
2.4 Ω
Pbfree Code :
yes
Supplier Device Package :
TO-268
Maximum Operating Temperature :
+ 150 C
Max Power Dissipation :
300 W
Factory Lead Time :
24 Weeks
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Channel Mode :
Enhancement
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Element Configuration :
Single
Brand :
IXYS
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Input Capacitance :
1.95 nF
Gate to Source Voltage (Vgs) :
20V
Series :
--
Additional Feature :
AVALANCHE RATED
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
2.6 Ω @ 3A, 10V
Rise Time :
33ns
Drain Current-Max (Abs) (ID) :
6A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Avalanche Energy Rating (Eas) :
500 mJ
Datasheets
IXTT6N120
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT6N120 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Type:High Voltage Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, IXTT6N120 pinout, IXTT6N120 datasheet PDF, IXTT6N120 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT6N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT6N120


N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT6N120 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.A device's maximum input capacitance is 1950pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.Its drain current is 6A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 24A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.4 Ω when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT6N120 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 2.4 Ω
a 1200V drain to source voltage (Vdss)


IXTT6N120 Applications


There are a lot of IXYS
IXTT6N120 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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