IXTT6N120
- Mfr.Part #
- IXTT6N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 6A TO268
- Stock
- 267
- In Stock :
- 267
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXTT6
- RoHS :
- Compliant
- Fall Time (Typ) :
- 18 ns
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- Max Operating Temperature :
- 150 °C
- Power Dissipation :
- 300W
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Length :
- 14 mm
- Rds On Max :
- 2.6 Ω
- Manufacturer :
- IXYS
- Product Type :
- MOSFET
- Package :
- Box
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±20V
- Subcategory :
- MOSFETs
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Surface Mount
- Packaging :
- Tube
- Power Dissipation (Max) :
- 300W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 24A
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Resistance :
- 2.6MOhm
- Published :
- 2004
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Height :
- 5.1 mm
- Continuous Drain Current (ID) :
- 6A
- Case Connection :
- DRAIN
- Mounting Style :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55 °C
- Turn-Off Delay Time :
- 42 ns
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 1.2kV
- Transistor Type :
- 1 N-Channel
- Width :
- 16.05 mm
- Type :
- High Voltage Power MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 300W Tc
- Number of Channels :
- 1 Channel
- Pin Count :
- 4
- Drain to Source Resistance :
- 2.4 Ω
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-268
- Maximum Operating Temperature :
- + 150 C
- Max Power Dissipation :
- 300 W
- Factory Lead Time :
- 24 Weeks
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 1200V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Element Configuration :
- Single
- Brand :
- IXYS
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Input Capacitance :
- 1.95 nF
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- --
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 3A, 10V
- Rise Time :
- 33ns
- Drain Current-Max (Abs) (ID) :
- 6A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Datasheets
- IXTT6N120

N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT6N120 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.A device's maximum input capacitance is 1950pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.Its drain current is 6A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 24A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.4 Ω when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT6N120 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 2.4 Ω
a 1200V drain to source voltage (Vdss)
IXTT6N120 Applications
There are a lot of IXYS
IXTT6N120 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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