IXTT69N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-268

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXTT69

Additional Feature :

AVALANCHE RATED

Max Operating Temperature :

150 °C

FET Feature :

--

Surface Mount :

yes

Fall Time (Typ) :

27 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Channel Mode :

Enhancement

Mount :

Surface Mount

Number of Elements :

1

Brand :

IXYS

RoHS :

Compliant

Pbfree Code :

yes

Turn-Off Delay Time :

75 ns

Width :

16.05 mm

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

49m Ω @ 500mA, 10V

Tradename :

PolarHT

Vgs (Max) :

±20V

Package :

Tube

Drain-source On Resistance-Max :

0.049Ohm

Number of Channels :

1 Channel

Input Capacitance :

4.96 nF

Terminal Form :

Gull wing

Number of Terminations :

2

Factory Lead Time :

24 Weeks

Product Type :

MOSFET

JEDEC-95 Code :

TO-268AA

Min Operating Temperature :

-55 °C

Number of Terminals :

2

Rds On Max :

49 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Power Dissipation :

500W

Mounting Style :

SMD/SMT

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

4960pF @ 25V

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Max Power Dissipation :

500 W

Power Dissipation-Max (Abs) :

500 W

Series :

PolarHT™

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Published :

2006

Height :

5.1 mm

FET Type :

N-Channel

Transistor Polarity :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Type :

PolarHT Power MOSFET

Drain to Source Resistance :

49 mΩ

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

1500 mJ

Case Connection :

DRAIN

Product Category :

MOSFET

Power Dissipation-Max :

500W Tc

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Length :

14 mm

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

Reach Compliance Code :

not_compliant

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

200A

Rise Time :

25ns

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

69 A

Power Dissipation (Max) :

500W (Tc)

DS Breakdown Voltage-Min :

300 V

Drain to Source Breakdown Voltage :

300V

Drain to Source Voltage (Vdss) :

300V

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

69A

Element Configuration :

Single

Configuration :

Single