IXTT68P20T
- Mfr.Part #
- IXTT68P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 68A TO268
- Stock
- 6,422
- In Stock :
- 6,422
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Minimum Operating Temperature :
- - 55 C
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 34A, 10V
- Published :
- 2013
- RoHS :
- Details
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Supplier Device Package :
- TO-268
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 200V
- Number of Elements :
- 1
- Power Dissipation :
- 568W
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 68A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.055Ohm
- Power Dissipation (Max) :
- 568W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Factory Lead Time :
- 24 Weeks
- FET Type :
- P-Channel
- Product Type :
- MOSFET
- Mounting Style :
- SMD/SMT
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±15V
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 15V
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 568W Tc
- Pulsed Drain Current-Max (IDM) :
- 200A
- Brand :
- IXYS
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 68A
- Product Category :
- MOSFET
- Pin Count :
- 4
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS
- FET Feature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 33400pF @ 25V
- Drain to Source Voltage (Vdss) :
- 200V
- Lead Free :
- Lead Free
- Series :
- TrenchP™
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 P-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Product Status :
- Active
- Base Product Number :
- IXTT68
- Datasheets
- IXTT68P20T

P-Channel Tube 55m Ω @ 34A, 10V ±15V 33400pF @ 25V 380nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT68P20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2500 mJ.A device's maximal input capacitance is 33400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 68A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTT68P20T Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 68A
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXTT68P20T Applications
There are a lot of IXYS
IXTT68P20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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