IXTT64N25P
- Mfr.Part #
- IXTT64N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 64A TO268
- Stock
- 4,382
- In Stock :
- 4,382
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Width :
- 16.05 mm
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 500mA, 10V
- Transistor Polarity :
- N-Channel
- Mount :
- Surface Mount
- Series :
- PolarHT™
- Tradename :
- PolarHT
- Rise Time :
- 23ns
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 60 ns
- Drain to Source Voltage (Vdss) :
- 250V
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-268
- Length :
- 14 mm
- Pulsed Drain Current-Max (IDM) :
- 160 A
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXTT64
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3450pF @ 25V
- Published :
- 2006
- Product Category :
- MOSFET
- Mounting Style :
- SMD/SMT
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 400W Tc
- Package Shape :
- RECTANGULAR
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Mounting Type :
- Surface Mount
- Number of Terminals :
- 2
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.049Ohm
- Drain to Source Breakdown Voltage :
- 250V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Manufacturer :
- IXYS
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 20 ns
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 400W
- Power Dissipation (Max) :
- 400W (Tc)
- JEDEC-95 Code :
- TO-268AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Type :
- PolarHT Power MOSFET
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 250 V
- Subcategory :
- MOSFETs
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Surface Mount :
- yes
- FET Feature :
- --
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Height :
- 5.1 mm
- Channel Mode :
- Enhancement
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Continuous Drain Current (ID) :
- 64A
- Datasheets
- IXTT64N25P

N-Channel Tube 49m Ω @ 500mA, 10V ±20V 3450pF @ 25V 105nC @ 10V 250V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT64N25P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3450pF @ 25V.This device conducts a continuous drain current (ID) of 64A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 160 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 250 V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTT64N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 160 A.
a 250V drain to source voltage (Vdss)
IXTT64N25P Applications
There are a lot of IXYS
IXTT64N25P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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