IXTT60N10

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Mfr.Part #
IXTT60N10
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 60A TO268
Stock
24,079
In Stock :
24,079

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXTT60
FET Feature :
--
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Published :
2003
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Drain to Source Breakdown Voltage :
100V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
2
Manufacturer :
IXYS
Subcategory :
MOSFETs
Power Dissipation (Max) :
300W (Tc)
Drain Current-Max (Abs) (ID) :
80A
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-268AA
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Pin Count :
4
Product Type :
MOSFET
Fall Time (Typ) :
18 ns
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-268
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSSO-G2
Power Dissipation :
300W
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Width :
14 mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Elements :
1
Height :
5.1 mm
Pulsed Drain Current-Max (IDM) :
320A
Series :
--
Package :
Tube
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Continuous Drain Current (ID) :
60A
Number of Terminals :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Mounting Style :
SMD/SMT
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Length :
16.05 mm
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation-Max :
300W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
20m Ω @ 30A, 10V
Drain-source On Resistance-Max :
0.02Ohm
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Pbfree Code :
yes
Mount :
Surface Mount
Channel Mode :
Enhancement
Turn-Off Delay Time :
70 ns
Reach Compliance Code :
not_compliant
Configuration :
Single
Rise Time :
20ns
Drain to Source Voltage (Vdss) :
100V
Case Connection :
DRAIN
Surface Mount :
yes
DS Breakdown Voltage-Min :
100 V
Transistor Element Material :
SILICON
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT60N10 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTT60N10 pinout, IXTT60N10 datasheet PDF, IXTT60N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT60N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT60N10


N-Channel Tube 20m Ω @ 30A, 10V ±20V 3200pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT60N10 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 3200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.Its drain current is 80A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT60N10 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 320A.
a 100V drain to source voltage (Vdss)


IXTT60N10 Applications


There are a lot of IXYS
IXTT60N10 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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