IXTT60N10
- Mfr.Part #
- IXTT60N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO268
- Stock
- 24,079
- In Stock :
- 24,079
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 14 mm
- DS Breakdown Voltage-Min :
- 100 V
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 320A
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- SMD/SMT
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.02Ohm
- Power Dissipation (Max) :
- 300W (Tc)
- Published :
- 2003
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation :
- 300W
- JESD-30 Code :
- R-PSSO-G2
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Height :
- 5.1 mm
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Continuous Drain Current (ID) :
- 60A
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 30A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 80A
- JESD-609 Code :
- e3
- Series :
- --
- Turn-Off Delay Time :
- 70 ns
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Length :
- 16.05 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 18 ns
- Number of Terminals :
- 2
- Reach Compliance Code :
- not_compliant
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-268AA
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1 Channel
- Rise Time :
- 20ns
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-268
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Drain to Source Breakdown Voltage :
- 100V
- Pin Count :
- 4
- Base Product Number :
- IXTT60
- Subcategory :
- MOSFETs
- Datasheets
- IXTT60N10

N-Channel Tube 20m Ω @ 30A, 10V ±20V 3200pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT60N10 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 3200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.Its drain current is 80A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT60N10 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 320A.
a 100V drain to source voltage (Vdss)
IXTT60N10 Applications
There are a lot of IXYS
IXTT60N10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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