IXTT60N10

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Mfr.Part #
IXTT60N10
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 60A TO268
Stock
24,079
In Stock :
24,079

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Gate to Source Voltage (Vgs) :
20V
Width :
14 mm
DS Breakdown Voltage-Min :
100 V
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
320A
RoHS Status :
ROHS3 Compliant
Mounting Style :
SMD/SMT
Surface Mount :
yes
Drain-source On Resistance-Max :
0.02Ohm
Power Dissipation (Max) :
300W (Tc)
Published :
2003
Manufacturer :
IXYS
Packaging :
Tube
Drain to Source Voltage (Vdss) :
100V
Power Dissipation :
300W
JESD-30 Code :
R-PSSO-G2
Qualification Status :
Not Qualified
Number of Elements :
1
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
1500 mJ
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
300W Tc
Height :
5.1 mm
Terminal Finish :
Matte Tin (Sn)
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Continuous Drain Current (ID) :
60A
Rds On (Max) @ Id, Vgs :
20m Ω @ 30A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) :
80A
JESD-609 Code :
e3
Series :
--
Turn-Off Delay Time :
70 ns
FET Type :
N-Channel
Case Connection :
DRAIN
Length :
16.05 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Channel Mode :
Enhancement
Product Category :
MOSFET
Configuration :
Single
Transistor Polarity :
N-Channel
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Transistor Application :
SWITCHING
Terminal Position :
Single
Vgs (Max) :
±20V
Fall Time (Typ) :
18 ns
Number of Terminals :
2
Reach Compliance Code :
not_compliant
Product Type :
MOSFET
JEDEC-95 Code :
TO-268AA
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Rise Time :
20ns
Package Shape :
RECTANGULAR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-268
FET Feature :
--
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
2
Pbfree Code :
yes
Brand :
IXYS
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Drain to Source Breakdown Voltage :
100V
Pin Count :
4
Base Product Number :
IXTT60
Subcategory :
MOSFETs
Datasheets
IXTT60N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT60N10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, IXTT60N10 pinout, IXTT60N10 datasheet PDF, IXTT60N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT60N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT60N10


N-Channel Tube 20m Ω @ 30A, 10V ±20V 3200pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT60N10 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 3200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.Its drain current is 80A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT60N10 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 320A.
a 100V drain to source voltage (Vdss)


IXTT60N10 Applications


There are a lot of IXYS
IXTT60N10 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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