IXTT52N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

20 ns

JESD-30 Code :

R-PSSO-G2

Max Operating Temperature :

150 °C

ECCN Code :

EAR99

Element Configuration :

Single

Radiation Hardening :

No

Min Operating Temperature :

-55 °C

Power Dissipation :

400W

Rise Time :

22ns

Base Product Number :

IXTT52

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Factory Lead Time :

24 Weeks

Rds On (Max) @ Id, Vgs :

66m Ω @ 500mA, 10V

Width :

14 mm

Input Capacitance (Ciss) (Max) @ Vds :

3490pF @ 25V

Series :

PolarHT™

Polarity/Channel Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

FET Feature :

--

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Terminals :

2

Pin Count :

4

Mounting Type :

Surface Mount

Height :

5.1 mm

Continuous Drain Current (ID) :

52A

Product Category :

MOSFET

Product Type :

MOSFET

Number of Terminations :

2

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

300 V

Pulsed Drain Current-Max (IDM) :

150 A

Power Dissipation (Max) :

400W (Tc)

Drain to Source Breakdown Voltage :

300V

Avalanche Energy Rating (Eas) :

1000 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-268AA

Input Capacitance :

3.49 nF

Power Dissipation-Max (Abs) :

400 W

Max Power Dissipation :

400 W

Surface Mount :

yes

Supplier Device Package :

TO-268

RoHS :

Compliant

Package Shape :

RECTANGULAR

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Number of Elements :

1

Published :

2006

Mount :

Surface Mount

Pbfree Code :

yes

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

300 V

Drain to Source Resistance :

66 mΩ

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Turn-Off Delay Time :

60 ns

Drain-source On Resistance-Max :

0.066Ohm

Terminal Position :

Single

Length :

16.05 mm

Drain Current-Max (Abs) (ID) :

52 A

Rds On Max :

66 mΩ

Transistor Type :

1 N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Channels :

1 Channel

Power Dissipation-Max :

400W Tc

JESD-609 Code :

e3

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR