IXTT52N30P
- Mfr.Part #
- IXTT52N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 52A TO268
- Stock
- 31,396
- In Stock :
- 31,396
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 52 A
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Min Operating Temperature :
- -55 °C
- Max Power Dissipation :
- 400 W
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Radiation Hardening :
- No
- Base Product Number :
- IXTT52
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Power Dissipation-Max (Abs) :
- 400 W
- Power Dissipation :
- 400W
- Rds On (Max) @ Id, Vgs :
- 66m Ω @ 500mA, 10V
- JEDEC-95 Code :
- TO-268AA
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 300V
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Length :
- 16.05 mm
- Max Operating Temperature :
- 150 °C
- Published :
- 2006
- Transistor Type :
- 1 N-Channel
- Height :
- 5.1 mm
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- SMD/SMT
- Terminal Position :
- Single
- Configuration :
- Single
- Drain to Source Resistance :
- 66 mΩ
- Package :
- Tube
- Input Capacitance :
- 3.49 nF
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 300 V
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 400W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 22ns
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 14 mm
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 400W (Tc)
- Supplier Device Package :
- TO-268
- Series :
- PolarHT™
- Drain-source On Resistance-Max :
- 0.066Ohm
- Continuous Drain Current (ID) :
- 52A
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 300 V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3490pF @ 25V
- Turn-Off Delay Time :
- 60 ns
- Product Type :
- MOSFET
- Pin Count :
- 4
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Maximum Operating Temperature :
- + 150 C
- Pbfree Code :
- yes
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- ECCN Code :
- EAR99
- FET Feature :
- --
- RoHS :
- Compliant
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 20 ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Product Status :
- Active
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminals :
- 2
- Factory Lead Time :
- 24 Weeks
- Number of Terminations :
- 2
- Rds On Max :
- 66 mΩ
- Datasheets
- IXTT52N30P

N-Channel Tube 66m Ω @ 500mA, 10V ±20V 3490pF @ 25V 110nC @ 10V 300 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT52N30P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3490pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 52A.When VGS=300V, and ID flows to VDS at 300VVDS, the drain-source breakdown voltage is 300V in this device.As shown in the table below, the drain current of this device is 52 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 150 A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 66 mΩ.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300 V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTT52N30P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150 A.
single MOSFETs transistor is 66 mΩ
a 300 V drain to source voltage (Vdss)
IXTT52N30P Applications
There are a lot of IXYS
IXTT52N30P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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