IXTT52N30P

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Mfr.Part #
IXTT52N30P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 300V 52A TO268
Stock
31,396
In Stock :
31,396

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Drain Current-Max (Abs) (ID) :
52 A
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Min Operating Temperature :
-55 °C
Max Power Dissipation :
400 W
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Radiation Hardening :
No
Base Product Number :
IXTT52
Reach Compliance Code :
not_compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Manufacturer :
IXYS
Power Dissipation-Max (Abs) :
400 W
Power Dissipation :
400W
Rds On (Max) @ Id, Vgs :
66m Ω @ 500mA, 10V
JEDEC-95 Code :
TO-268AA
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
300V
Terminal Form :
Gull wing
Packaging :
Tube
Length :
16.05 mm
Max Operating Temperature :
150 °C
Published :
2006
Transistor Type :
1 N-Channel
Height :
5.1 mm
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
SMD/SMT
Terminal Position :
Single
Configuration :
Single
Drain to Source Resistance :
66 mΩ
Package :
Tube
Input Capacitance :
3.49 nF
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
300 V
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Power Dissipation-Max :
400W Tc
Operating Temperature :
-55°C~150°C TJ
Rise Time :
22ns
Gate to Source Voltage (Vgs) :
20V
Width :
14 mm
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
400W (Tc)
Supplier Device Package :
TO-268
Series :
PolarHT™
Drain-source On Resistance-Max :
0.066Ohm
Continuous Drain Current (ID) :
52A
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
150 A
Number of Elements :
1
Vgs(th) (Max) @ Id :
5V @ 250μA
Surface Mount :
yes
DS Breakdown Voltage-Min :
300 V
Transistor Element Material :
SILICON
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
3490pF @ 25V
Turn-Off Delay Time :
60 ns
Product Type :
MOSFET
Pin Count :
4
FET Type :
N-Channel
Number of Channels :
1 Channel
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Mount :
Surface Mount
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
ECCN Code :
EAR99
FET Feature :
--
RoHS :
Compliant
Case Connection :
DRAIN
Fall Time (Typ) :
20 ns
Avalanche Energy Rating (Eas) :
1000 mJ
Product Status :
Active
JESD-30 Code :
R-PSSO-G2
Number of Terminals :
2
Factory Lead Time :
24 Weeks
Number of Terminations :
2
Rds On Max :
66 mΩ
Datasheets
IXTT52N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT52N30P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, IXTT52N30P pinout, IXTT52N30P datasheet PDF, IXTT52N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT52N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT52N30P


N-Channel Tube 66m Ω @ 500mA, 10V ±20V 3490pF @ 25V 110nC @ 10V 300 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT52N30P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3490pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 52A.When VGS=300V, and ID flows to VDS at 300VVDS, the drain-source breakdown voltage is 300V in this device.As shown in the table below, the drain current of this device is 52 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 150 A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 66 mΩ.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300 V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTT52N30P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150 A.
single MOSFETs transistor is 66 mΩ
a 300 V drain to source voltage (Vdss)


IXTT52N30P Applications


There are a lot of IXYS
IXTT52N30P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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