IXTT50P10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Compliant

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Transistor Polarity :

P-Channel

Number of Terminals :

2

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Resistance :

55mOhm

Package :

Tube

Drain to Source Voltage (Vdss) :

100V

Rds On Max :

55 mΩ

Polarity/Channel Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Product Status :

Active

Factory Lead Time :

24 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Power Dissipation :

300 W

Packaging :

Tube

Turn-Off Delay Time :

86 ns

Terminal Finish :

PURE TIN

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.055 Ω

Number of Channels :

1 Channel

Product Type :

MOSFET

ECCN Code :

EAR99

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

300W (Tc)

Element Configuration :

Single

Case Connection :

DRAIN

Brand :

IXYS

Mount :

Surface Mount

Number of Pins :

3

Min Operating Temperature :

-55 °C

Input Capacitance :

4.35 nF

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 25V

Published :

2008

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pulsed Drain Current-Max (IDM) :

200A

DS Breakdown Voltage-Min :

100 V

Vgs (Max) :

±20V

Configuration :

Single

Terminal Position :

Single

JESD-609 Code :

e3

Transistor Type :

1 P-Channel

Lead Free :

Lead Free

Power Dissipation-Max (Abs) :

300 W

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Width :

14 mm

Qualification Status :

Not Qualified

Fall Time (Typ) :

38 ns

Rds On (Max) @ Id, Vgs :

55m Ω @ 25A, 10V

Drain Current-Max (Abs) (ID) :

50 A

Series :

--

Length :

16.05 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

50A

Reach Compliance Code :

Unknown

Height :

5.1 mm

Pin Count :

4

FET Type :

P-Channel

Supplier Device Package :

TO-268

JEDEC-95 Code :

TO-268AA

Avalanche Energy Rating (Eas) :

30 mJ

Drain to Source Breakdown Voltage :

-100V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Max Operating Temperature :

150 °C

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

55 mΩ

Power Dissipation-Max :

300W Tc

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

SMD/SMT

Rise Time :

39ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Terminations :

2

Base Product Number :

IXTT50

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes