IXTT50P085
- Mfr.Part #
- IXTT50P085
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 85V 50A TO268
- Stock
- 32,016
- In Stock :
- 32,016
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 200A
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 300W (Tc)
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Continuous Drain Current (ID) :
- 50A
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 25A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- Number of Terminals :
- 2
- Drain-source On Resistance-Max :
- 0.055Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-268AA
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-268
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 85V
- RoHS Status :
- RoHS Compliant
- Series :
- --
- Polarity/Channel Type :
- P-Channel
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Package :
- Tube
- Published :
- 2005
- Additional Feature :
- AVALANCHE RATED
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 85V
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IXTT50P085

P-Channel Tube 55m Ω @ 25A, 10V ±20V 4200pF @ 25V 150nC @ 10V 85V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT50P085 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.Peak drain current for this device is 200A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 85V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 85V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTT50P085 Features
a continuous drain current (ID) of 50A
based on its rated peak drain current 200A.
a 85V drain to source voltage (Vdss)
IXTT50P085 Applications
There are a lot of IXYS
IXTT50P085 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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