IXTT500N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Published :

2009

Continuous Drain Current (ID) :

500A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXTT500

Terminal Form :

Gull wing

Rise Time :

16 ns

Drain-source On Resistance-Max :

0.0016 Ω

Factory Lead Time :

24 Weeks

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

Mount :

Surface Mount

Package :

Tube

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Power Dissipation :

1kW

FET Type :

N-Channel

Terminal Finish :

PURE TIN

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

25000pF @ 25V

Radiation Hardening :

No

Power Dissipation-Max :

1000W Tc

Current - Continuous Drain (Id) @ 25°C :

500A Tc

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

800 mJ

Packaging :

Tube

Lead Free :

Lead Free

Number of Terminals :

2

Reach Compliance Code :

not_compliant

Product Category :

MOSFET

Maximum Operating Temperature :

+ 175 C

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Terminal Position :

Single

Width :

16.05 mm

Height :

5.1 mm

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Length :

14 mm

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

500 A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

JESD-609 Code :

e3

Product Type :

MOSFET

Power Dissipation (Max) :

1000W (Tc)

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Pin Count :

4

Series :

TrenchT2™

ECCN Code :

EAR99

JEDEC-95 Code :

TO-268AA

Power Dissipation-Max (Abs) :

1000 W

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Pbfree Code :

yes

Type :

TrenchT2 Power MOSFET

Supplier Device Package :

TO-268

Gate Charge (Qg) (Max) @ Vgs :

405nC @ 10V

Mounting Style :

SMD/SMT

RoHS :

Details

Transistor Element Material :

SILICON

Product Status :

Active

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

1250 A

DS Breakdown Voltage-Min :

40V

Brand :

IXYS