IXTT500N04T2
- Mfr.Part #
- IXTT500N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 500A TO268
- Stock
- 16,403
- In Stock :
- 16,403
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 500 A
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Width :
- 16.05 mm
- Tradename :
- HiPerFET
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Height :
- 5.1 mm
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0016 Ω
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 405nC @ 10V
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-268AA
- Series :
- TrenchT2™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Pulsed Drain Current-Max (IDM) :
- 1250 A
- Base Product Number :
- IXTT500
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Power Dissipation :
- 1kW
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 25000pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 2
- Length :
- 14 mm
- Published :
- 2009
- Supplier Device Package :
- TO-268
- Power Dissipation (Max) :
- 1000W (Tc)
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 24 Weeks
- Power Dissipation-Max :
- 1000W Tc
- Continuous Drain Current (ID) :
- 500A
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation-Max (Abs) :
- 1000 W
- Mount :
- Surface Mount
- Surface Mount :
- yes
- RoHS :
- Details
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 40V
- Rise Time :
- 16 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 500A Tc
- Pin Count :
- 4
- Terminal Finish :
- PURE TIN
- Type :
- TrenchT2 Power MOSFET
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 100A, 10V
- Datasheets
- IXTT500N04T2

N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 25000pF @ 25V 405nC @ 10V 40V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT500N04T2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 25000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500A amps.A device can conduct a maximum continuous current of [500 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 1250 A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTT500N04T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 500A
based on its rated peak drain current 1250 A.
a 40V drain to source voltage (Vdss)
IXTT500N04T2 Applications
There are a lot of IXYS
IXTT500N04T2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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