IXTT500N04T2

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Mfr.Part #
IXTT500N04T2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 40V 500A TO268
Stock
16,403
In Stock :
16,403

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
500 A
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Width :
16.05 mm
Tradename :
HiPerFET
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Height :
5.1 mm
Case Connection :
DRAIN
Number of Elements :
1
Drain-source On Resistance-Max :
0.0016 Ω
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
405nC @ 10V
Brand :
IXYS
JEDEC-95 Code :
TO-268AA
Series :
TrenchT2™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Package :
Tube
Vgs (Max) :
±20V
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
800 mJ
Pulsed Drain Current-Max (IDM) :
1250 A
Base Product Number :
IXTT500
Transistor Application :
SWITCHING
Product Status :
Active
Power Dissipation :
1kW
Product Category :
MOSFET
Product Type :
MOSFET
Pbfree Code :
yes
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
25000pF @ 25V
RoHS Status :
ROHS3 Compliant
Number of Terminals :
2
Length :
14 mm
Published :
2009
Supplier Device Package :
TO-268
Power Dissipation (Max) :
1000W (Tc)
Transistor Element Material :
SILICON
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PSSO-G2
Channel Mode :
Enhancement
Factory Lead Time :
24 Weeks
Power Dissipation-Max :
1000W Tc
Continuous Drain Current (ID) :
500A
Maximum Operating Temperature :
+ 175 C
Power Dissipation-Max (Abs) :
1000 W
Mount :
Surface Mount
Surface Mount :
yes
RoHS :
Details
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Number of Terminations :
2
Qualification Status :
Not Qualified
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
40V
Rise Time :
16 ns
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Terminal Position :
Single
Lead Free :
Lead Free
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
500A Tc
Pin Count :
4
Terminal Finish :
PURE TIN
Type :
TrenchT2 Power MOSFET
Rds On (Max) @ Id, Vgs :
1.6m Ω @ 100A, 10V
Datasheets
IXTT500N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT500N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Terminations:2, Type:TrenchT2 Power MOSFET, IXTT500N04T2 pinout, IXTT500N04T2 datasheet PDF, IXTT500N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT500N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT500N04T2


N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 25000pF @ 25V 405nC @ 10V 40V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT500N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 25000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500A amps.A device can conduct a maximum continuous current of [500 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 1250 A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTT500N04T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 500A
based on its rated peak drain current 1250 A.
a 40V drain to source voltage (Vdss)


IXTT500N04T2 Applications


There are a lot of IXYS
IXTT500N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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