IXTT48P20P

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Mfr.Part #
IXTT48P20P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 200V 48A TO268
Stock
26,364
In Stock :
26,364

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
85m Ω @ 24A, 10V
Manufacturer :
IXYS
Product Status :
Active
RoHS :
Compliant
Factory Lead Time :
24 Weeks
Case Connection :
DRAIN
Turn-Off Delay Time :
67 ns
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Input Capacitance :
5.4 nF
Max Operating Temperature :
150 °C
Power Dissipation-Max :
462W Tc
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
2500 mJ
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Base Product Number :
IXTT48
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
20V
Brand :
IXYS
Length :
16.05 mm
Operating Mode :
ENHANCEMENT MODE
Width :
14 mm
Radiation Hardening :
No
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Supplier Device Package :
TO-268
Rise Time :
46ns
JESD-609 Code :
e3
ECCN Code :
EAR99
Height :
5.1 mm
Resistance :
85mOhm
Packaging :
Tube
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Min Operating Temperature :
-55 °C
Mounting Style :
SMD/SMT
Transistor Element Material :
SILICON
Published :
2008
Pin Count :
4
Power Dissipation :
462W
Pbfree Code :
yes
Series :
PolarP™
Drain to Source Resistance :
85 mΩ
Max Power Dissipation :
462 W
Transistor Polarity :
P-Channel
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Mount :
Surface Mount
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Mode :
Enhancement
FET Type :
P-Channel
Transistor Application :
SWITCHING
Product Type :
MOSFET
Terminal Finish :
PURE TIN
Power Dissipation (Max) :
462W (Tc)
Drain to Source Voltage (Vdss) :
200V
Terminal Form :
Gull wing
Reach Compliance Code :
Unknown
Continuous Drain Current (ID) :
48A
Number of Terminations :
2
Rds On Max :
85 mΩ
Minimum Operating Temperature :
- 55 C
Drain to Source Breakdown Voltage :
-200V
Fall Time (Typ) :
27 ns
Package :
Tube
Transistor Type :
1 P-Channel
Number of Elements :
1
Element Configuration :
Single
Datasheets
IXTT48P20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT48P20P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Terminations:2, IXTT48P20P pinout, IXTT48P20P datasheet PDF, IXTT48P20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT48P20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT48P20P


P-Channel Tube 85m Ω @ 24A, 10V ±20V 5400pF @ 25V 103nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT48P20P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5400pF @ 25V.This device conducts a continuous drain current (ID) of 48A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 67 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 85 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTT48P20P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 67 ns
single MOSFETs transistor is 85 mΩ
a 200V drain to source voltage (Vdss)


IXTT48P20P Applications


There are a lot of IXYS
IXTT48P20P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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