IXTT48P20P
- Mfr.Part #
- IXTT48P20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 48A TO268
- Stock
- 26,364
- In Stock :
- 26,364
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 24A, 10V
- Manufacturer :
- IXYS
- Product Status :
- Active
- RoHS :
- Compliant
- Factory Lead Time :
- 24 Weeks
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 67 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Input Capacitance :
- 5.4 nF
- Max Operating Temperature :
- 150 °C
- Power Dissipation-Max :
- 462W Tc
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 103nC @ 10V
- Base Product Number :
- IXTT48
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Brand :
- IXYS
- Length :
- 16.05 mm
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 14 mm
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-268
- Rise Time :
- 46ns
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Height :
- 5.1 mm
- Resistance :
- 85mOhm
- Packaging :
- Tube
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Min Operating Temperature :
- -55 °C
- Mounting Style :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Pin Count :
- 4
- Power Dissipation :
- 462W
- Pbfree Code :
- yes
- Series :
- PolarP™
- Drain to Source Resistance :
- 85 mΩ
- Max Power Dissipation :
- 462 W
- Transistor Polarity :
- P-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Mount :
- Surface Mount
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Mode :
- Enhancement
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Terminal Finish :
- PURE TIN
- Power Dissipation (Max) :
- 462W (Tc)
- Drain to Source Voltage (Vdss) :
- 200V
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Unknown
- Continuous Drain Current (ID) :
- 48A
- Number of Terminations :
- 2
- Rds On Max :
- 85 mΩ
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Breakdown Voltage :
- -200V
- Fall Time (Typ) :
- 27 ns
- Package :
- Tube
- Transistor Type :
- 1 P-Channel
- Number of Elements :
- 1
- Element Configuration :
- Single
- Datasheets
- IXTT48P20P

P-Channel Tube 85m Ω @ 24A, 10V ±20V 5400pF @ 25V 103nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT48P20P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5400pF @ 25V.This device conducts a continuous drain current (ID) of 48A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 67 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 85 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTT48P20P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 67 ns
single MOSFETs transistor is 85 mΩ
a 200V drain to source voltage (Vdss)
IXTT48P20P Applications
There are a lot of IXYS
IXTT48P20P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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