IXTT40N50L2

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Mfr.Part #
IXTT40N50L2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 40A TO268
Stock
125
In Stock :
125

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Number of Elements :
1
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation :
540W
Product Type :
MOSFET
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-268AA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
40A
Rds On (Max) @ Id, Vgs :
170m Ω @ 20A, 10V
Polarity/Channel Type :
N-Channel
Number of Pins :
3
FET Feature :
--
Power Dissipation (Max) :
540W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
500V
Length :
14 mm
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Nominal Vgs :
2.5 V
Width :
16.05 mm
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-268
Drain Current-Max (Abs) (ID) :
40 A
JESD-609 Code :
e3
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
REACH SVHC :
No SVHC
Power Dissipation-Max (Abs) :
540 W
Input Capacitance (Ciss) (Max) @ Vds :
10400pF @ 25V
FET Type :
N-Channel
Number of Channels :
1 Channel
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.17 Ω
Terminal Form :
Gull wing
Terminal Position :
Single
Published :
2006
Package :
Tube
Base Product Number :
IXTT40
Packaging :
Tube
Terminal Finish :
PURE TIN
Operating Temperature :
-55°C~150°C TJ
Product Status :
Active
Factory Lead Time :
24 Weeks
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Style :
SMD/SMT
Brand :
IXYS
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Product Category :
MOSFET
Power Dissipation-Max :
540W Tc
Type :
Linear L2 Power MOSFET
Threshold Voltage :
2.5V
Reach Compliance Code :
Unknown
Gate Charge (Qg) (Max) @ Vgs :
320nC @ 10V
Channel Mode :
Enhancement
Vgs (Max) :
±20V
Pin Count :
4
RoHS :
Details
Pbfree Code :
yes
Number of Terminals :
2
Tradename :
Linear L2
DS Breakdown Voltage-Min :
500V
Lead Free :
Lead Free
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Mount :
Surface Mount
Rise Time :
133 ns
Additional Feature :
AVALANCHE RATED
Series :
Linear L2™
Pulsed Drain Current-Max (IDM) :
80A
Height :
5.1 mm
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT40N50L2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:Linear L2 Power MOSFET, Number of Terminations:2, IXTT40N50L2 pinout, IXTT40N50L2 datasheet PDF, IXTT40N50L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT40N50L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT40N50L2


N-Channel Tube 170m Ω @ 20A, 10V ±20V 10400pF @ 25V 320nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT40N50L2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10400pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 40 A.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTT40N50L2 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)


IXTT40N50L2 Applications


There are a lot of IXYS
IXTT40N50L2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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