IXTT40N50L2
- Mfr.Part #
- IXTT40N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 40A TO268
- Stock
- 125
- In Stock :
- 125
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation :
- 540W
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-268AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 40A
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 20A, 10V
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- FET Feature :
- --
- Power Dissipation (Max) :
- 540W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 500V
- Length :
- 14 mm
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Nominal Vgs :
- 2.5 V
- Width :
- 16.05 mm
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-268
- Drain Current-Max (Abs) (ID) :
- 40 A
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- REACH SVHC :
- No SVHC
- Power Dissipation-Max (Abs) :
- 540 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 10400pF @ 25V
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.17 Ω
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Published :
- 2006
- Package :
- Tube
- Base Product Number :
- IXTT40
- Packaging :
- Tube
- Terminal Finish :
- PURE TIN
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Active
- Factory Lead Time :
- 24 Weeks
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- SMD/SMT
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 540W Tc
- Type :
- Linear L2 Power MOSFET
- Threshold Voltage :
- 2.5V
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- Channel Mode :
- Enhancement
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- RoHS :
- Details
- Pbfree Code :
- yes
- Number of Terminals :
- 2
- Tradename :
- Linear L2
- DS Breakdown Voltage-Min :
- 500V
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Rise Time :
- 133 ns
- Additional Feature :
- AVALANCHE RATED
- Series :
- Linear L2™
- Pulsed Drain Current-Max (IDM) :
- 80A
- Height :
- 5.1 mm
- Datasheets
- IXTT40N50L2
IXTT40N50L2 Documents

N-Channel Tube 170m Ω @ 20A, 10V ±20V 10400pF @ 25V 320nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT40N50L2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10400pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 40 A.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTT40N50L2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTT40N50L2 Applications
There are a lot of IXYS
IXTT40N50L2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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