IXTT40N50L2

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Mfr.Part #
IXTT40N50L2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 40A TO268
Stock
125
In Stock :
125

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max (Abs) :
540 W
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
JESD-609 Code :
e3
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-268AA
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
80A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Width :
16.05 mm
Gate Charge (Qg) (Max) @ Vgs :
320nC @ 10V
Power Dissipation (Max) :
540W (Tc)
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Pin Count :
4
Package :
Tube
Number of Terminals :
2
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
170m Ω @ 20A, 10V
Drain to Source Voltage (Vdss) :
500V
Rise Time :
133 ns
Channel Mode :
Enhancement
Series :
Linear L2™
Lead Free :
Lead Free
Threshold Voltage :
2.5V
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2006
Additional Feature :
AVALANCHE RATED
Product Type :
MOSFET
DS Breakdown Voltage-Min :
500V
Reach Compliance Code :
Unknown
Terminal Form :
Gull wing
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-268
Terminal Finish :
PURE TIN
RoHS :
Details
Number of Elements :
1
Number of Channels :
1 Channel
Drain-source On Resistance-Max :
0.17 Ω
Transistor Polarity :
N-Channel
Factory Lead Time :
24 Weeks
FET Feature :
--
FET Type :
N-Channel
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
2000 mJ
JESD-30 Code :
R-PSSO-G2
Length :
14 mm
Product Status :
Active
Drain Current-Max (Abs) (ID) :
40 A
Mount :
Surface Mount
Height :
5.1 mm
Tradename :
Linear L2
Input Capacitance (Ciss) (Max) @ Vds :
10400pF @ 25V
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
40A
Power Dissipation-Max :
540W Tc
Mounting Style :
SMD/SMT
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Type :
Linear L2 Power MOSFET
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
2
Power Dissipation :
540W
Base Product Number :
IXTT40
Terminal Position :
Single
Surface Mount :
yes
Nominal Vgs :
2.5 V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Brand :
IXYS
Datasheets
IXTT40N50L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT40N50L2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Channels:1 Channel, Type:Linear L2 Power MOSFET, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXTT40N50L2 pinout, IXTT40N50L2 datasheet PDF, IXTT40N50L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT40N50L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT40N50L2


N-Channel Tube 170m Ω @ 20A, 10V ±20V 10400pF @ 25V 320nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT40N50L2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10400pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 40 A.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTT40N50L2 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)


IXTT40N50L2 Applications


There are a lot of IXYS
IXTT40N50L2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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