IXTT40N50L2
- Mfr.Part #
- IXTT40N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 40A TO268
- Stock
- 125
- In Stock :
- 125
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 540 W
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- JESD-609 Code :
- e3
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-268AA
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 80A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Width :
- 16.05 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- Power Dissipation (Max) :
- 540W (Tc)
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Package :
- Tube
- Number of Terminals :
- 2
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 20A, 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 133 ns
- Channel Mode :
- Enhancement
- Series :
- Linear L2™
- Lead Free :
- Lead Free
- Threshold Voltage :
- 2.5V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 500V
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-268
- Terminal Finish :
- PURE TIN
- RoHS :
- Details
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.17 Ω
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- FET Feature :
- --
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 14 mm
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 40 A
- Mount :
- Surface Mount
- Height :
- 5.1 mm
- Tradename :
- Linear L2
- Input Capacitance (Ciss) (Max) @ Vds :
- 10400pF @ 25V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 40A
- Power Dissipation-Max :
- 540W Tc
- Mounting Style :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- Type :
- Linear L2 Power MOSFET
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- Power Dissipation :
- 540W
- Base Product Number :
- IXTT40
- Terminal Position :
- Single
- Surface Mount :
- yes
- Nominal Vgs :
- 2.5 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Brand :
- IXYS
- Datasheets
- IXTT40N50L2

N-Channel Tube 170m Ω @ 20A, 10V ±20V 10400pF @ 25V 320nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT40N50L2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10400pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 40 A.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTT40N50L2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTT40N50L2 Applications
There are a lot of IXYS
IXTT40N50L2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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