IXTT36N50P
- Mfr.Part #
- IXTT36N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A TO268
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 75 ns
- Manufacturer :
- IXYS
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Packaging :
- Tube
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Height :
- 5.1 mm
- Minimum Operating Temperature :
- - 55 C
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Subcategory :
- MOSFETs
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 108 A
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 14 mm
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Supplier Device Package :
- TO-268
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- 500V
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 540W Tc
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 21 ns
- Continuous Drain Current (ID) :
- 36A
- Drain-source On Resistance-Max :
- 0.17 Ω
- Product Category :
- MOSFET
- Rise Time :
- 27ns
- Power Dissipation (Max) :
- 540W (Tc)
- Mounting Style :
- SMD/SMT
- Lead Free :
- Lead Free
- Package :
- Tube
- Power Dissipation :
- 540W
- Number of Terminals :
- 2
- FET Feature :
- --
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-268AA
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- PolarHV™
- Configuration :
- Single
- JESD-609 Code :
- e3
- Tradename :
- PolarHV
- Mount :
- Surface Mount
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Type :
- PolarHV Power MOSFET
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 500V
- Transistor Polarity :
- N-Channel
- Width :
- 16.05 mm
- Base Product Number :
- IXTT36
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 36A
- Pbfree Code :
- yes
- Brand :
- IXYS
- Reach Compliance Code :
- not_compliant
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXTT36N50P

N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT36N50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 36A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 108 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTT36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108 A.
a 500V drain to source voltage (Vdss)
IXTT36N50P Applications
There are a lot of IXYS
IXTT36N50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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