IXTT36N50P

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Mfr.Part #
IXTT36N50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO268
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
75 ns
Manufacturer :
IXYS
Number of Terminations :
2
FET Type :
N-Channel
Packaging :
Tube
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
500 V
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Height :
5.1 mm
Minimum Operating Temperature :
- 55 C
Element Configuration :
Single
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
36A Tc
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Vgs(th) (Max) @ Id :
5V @ 250μA
Subcategory :
MOSFETs
Published :
2006
Pulsed Drain Current-Max (IDM) :
108 A
Operating Mode :
ENHANCEMENT MODE
Length :
14 mm
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
1500 mJ
Supplier Device Package :
TO-268
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Drain to Source Breakdown Voltage :
500V
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Pin Count :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±30V
Power Dissipation-Max :
540W Tc
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
21 ns
Continuous Drain Current (ID) :
36A
Drain-source On Resistance-Max :
0.17 Ω
Product Category :
MOSFET
Rise Time :
27ns
Power Dissipation (Max) :
540W (Tc)
Mounting Style :
SMD/SMT
Lead Free :
Lead Free
Package :
Tube
Power Dissipation :
540W
Number of Terminals :
2
FET Feature :
--
Case Connection :
DRAIN
JEDEC-95 Code :
TO-268AA
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
500V
Series :
PolarHV™
Configuration :
Single
JESD-609 Code :
e3
Tradename :
PolarHV
Mount :
Surface Mount
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Type :
PolarHV Power MOSFET
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Voltage - Rated DC :
500V
Transistor Polarity :
N-Channel
Width :
16.05 mm
Base Product Number :
IXTT36
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
36A
Pbfree Code :
yes
Brand :
IXYS
Reach Compliance Code :
not_compliant
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Datasheets
IXTT36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT36N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:PolarHV Power MOSFET, Operating Temperature:-55°C~150°C TJ, IXTT36N50P pinout, IXTT36N50P datasheet PDF, IXTT36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT36N50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 36A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 108 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108 A.
a 500V drain to source voltage (Vdss)


IXTT36N50P Applications


There are a lot of IXYS
IXTT36N50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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