IXTT30N60P

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Mfr.Part #
IXTT30N60P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO268
Stock
42,820
In Stock :
42,820

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
IXYS
Channel Mode :
Enhancement
Terminal Position :
Single
Base Product Number :
IXTT30
Number of Terminations :
2
Terminal Finish :
Matte Tin (Sn)
Factory Lead Time :
24 Weeks
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Terminal Form :
Gull wing
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-268AA
Drain-source On Resistance-Max :
0.24Ohm
Power Dissipation :
540W
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
2
Height :
5.1 mm
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Turn-Off Delay Time :
80 ns
Current Rating :
30A
Fall Time (Typ) :
25 ns
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Power Dissipation (Max) :
540W (Tc)
Published :
2006
Reach Compliance Code :
not_compliant
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Packaging :
Tube
Power Dissipation-Max :
540W Tc
JESD-609 Code :
e3
Configuration :
Single
Number of Channels :
1 Channel
Product Category :
MOSFET
Mounting Style :
SMD/SMT
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package :
Tube
Series :
PolarHV™
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Drain to Source Voltage (Vdss) :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
20ns
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
30A
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Pin Count :
4
Transistor Application :
SWITCHING
Type :
PolarHV Power MOSFET
Pulsed Drain Current-Max (IDM) :
80A
Voltage - Rated DC :
600V
Product Status :
Active
Supplier Device Package :
TO-268
Width :
16.05 mm
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Tradename :
PolarHV
Vgs(th) (Max) @ Id :
5V @ 250μA
Subcategory :
MOSFETs
Surface Mount :
yes
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
600 V
Avalanche Energy Rating (Eas) :
1500 mJ
Package Shape :
RECTANGULAR
Vgs (Max) :
±30V
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
5050pF @ 25V
Drain to Source Breakdown Voltage :
600V
Length :
14 mm
FET Type :
N-Channel
Datasheets
IXTT30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Type:PolarHV Power MOSFET, IXTT30N60P pinout, IXTT30N60P datasheet PDF, IXTT30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT30N60P


N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT30N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTT30N60P Applications


There are a lot of IXYS
IXTT30N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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