IXTT30N60P
- Mfr.Part #
- IXTT30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO268
- Stock
- 42,820
- In Stock :
- 42,820
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 600V
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2006
- Height :
- 5.1 mm
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain-source On Resistance-Max :
- 0.24Ohm
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Rise Time :
- 20ns
- Series :
- PolarHV™
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current Rating :
- 30A
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 600V
- Tradename :
- PolarHV
- Maximum Operating Temperature :
- + 150 C
- Subcategory :
- MOSFETs
- Pin Count :
- 4
- Fall Time (Typ) :
- 25 ns
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 80 ns
- Element Configuration :
- Single
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 540W Tc
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Mount :
- Surface Mount
- Factory Lead Time :
- 24 Weeks
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 30A
- Type :
- PolarHV Power MOSFET
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Base Product Number :
- IXTT30
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Reach Compliance Code :
- not_compliant
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminals :
- 2
- Power Dissipation (Max) :
- 540W (Tc)
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-268
- Brand :
- IXYS
- Width :
- 16.05 mm
- Mounting Style :
- SMD/SMT
- Power Dissipation :
- 540W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 14 mm
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- JEDEC-95 Code :
- TO-268AA
- Datasheets
- IXTT30N60P

N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT30N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTT30N60P Applications
There are a lot of IXYS
IXTT30N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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