IXTT30N60L2

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Mfr.Part #
IXTT30N60L2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO268
Stock
9,409
In Stock :
9,409

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
10700pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
Product :
Linear L2 Power MOSFET
Gate Charge (Qg) (Max) @ Vgs :
335nC @ 10V
Rise Time :
65 ns
Brand :
IXYS
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.24Ohm
Case Connection :
DRAIN
Pbfree Code :
yes
Reach Compliance Code :
Unknown
DS Breakdown Voltage-Min :
600V
Transistor Element Material :
SILICON
Number of Elements :
1
Series :
Linear L2™
Power Dissipation (Max) :
540W (Tc)
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
600V
Continuous Drain Current (ID) :
30A
Number of Channels :
1 Channel
Supplier Device Package :
TO-268
Subcategory :
MOSFETs
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
REACH SVHC :
No SVHC
Avalanche Energy Rating (Eas) :
2000 mJ
Mount :
Surface Mount
Radiation Hardening :
No
FET Feature :
--
Published :
2009
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
JESD-609 Code :
e3
Threshold Voltage :
2.5V
RoHS :
Details
Terminal Form :
Gull wing
Power Dissipation-Max :
540W Tc
Transistor Application :
SWITCHING
Base Product Number :
IXTT30
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Channel Mode :
Enhancement
Terminal Finish :
PURE TIN
Vgs (Max) :
±20V
Manufacturer :
IXYS
Mounting Style :
SMD/SMT
Factory Lead Time :
24 Weeks
Pin Count :
4
RoHS Status :
ROHS3 Compliant
Type :
Linear L2 Power MOSFET with extended FBSOA
Power Dissipation :
540W
Terminal Position :
Single
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
80A
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Product Status :
Active
JESD-30 Code :
R-PSSO-G2
Mounting Type :
Surface Mount
Number of Terminations :
2
Lead Free :
Lead Free
Datasheets
IXTT30N60L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N60L2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:Linear L2 Power MOSFET with extended FBSOA, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, IXTT30N60L2 pinout, IXTT30N60L2 datasheet PDF, IXTT30N60L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N60L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT30N60L2


N-Channel Tube 240m Ω @ 15A, 10V ±20V 10700pF @ 25V 335nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT30N60L2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 10700pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTT30N60L2 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 600V drain to source voltage (Vdss)


IXTT30N60L2 Applications


There are a lot of IXYS
IXTT30N60L2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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