IXTT30N50P
- Mfr.Part #
- IXTT30N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO268
- Stock
- 33,177
- In Stock :
- 33,177
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 75A
- Current Rating :
- 30A
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 30A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Vgs (Max) :
- ±30V
- Pin Count :
- 4
- Turn-Off Delay Time :
- 75 ns
- DS Breakdown Voltage-Min :
- 500 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2006
- Factory Lead Time :
- 24 Weeks
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 2
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Series :
- PolarHV™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Power Dissipation :
- 460W
- Mount :
- Surface Mount
- Number of Terminals :
- 2
- Mounting Style :
- SMD/SMT
- Rise Time :
- 27ns
- Height :
- 5.1 mm
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Voltage - Rated DC :
- 500V
- Base Product Number :
- IXTT30
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Supplier Device Package :
- TO-268
- Fall Time (Typ) :
- 21 ns
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Terminal Form :
- Gull wing
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Subcategory :
- MOSFETs
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Drain-source On Resistance-Max :
- 0.2Ohm
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 14 mm
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- Product Type :
- MOSFET
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-268AA
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Package :
- Tube
- Power Dissipation-Max :
- 460W Tc
- Length :
- 16.05 mm
- Power Dissipation (Max) :
- 460W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Datasheets
- IXTT30N50P
IXTT30N50P Documents

N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT30N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.The maximum input capacitance of this device is 4150pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 75A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTT30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXTT30N50P Applications
There are a lot of IXYS
IXTT30N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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