IXTT30N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Configuration :

Single

Published :

2006

Rise Time :

27ns

DS Breakdown Voltage-Min :

500 V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Avalanche Energy Rating (Eas) :

1200 mJ

Vgs (Max) :

±30V

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

75 ns

Package :

Tube

Rds On (Max) @ Id, Vgs :

200m Ω @ 15A, 10V

Transistor Element Material :

SILICON

Power Dissipation (Max) :

460W (Tc)

Surface Mount :

yes

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Supplier Device Package :

TO-268

Width :

14 mm

Pin Count :

4

Base Product Number :

IXTT30

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Voltage - Rated DC :

500V

Number of Terminations :

2

Fall Time (Typ) :

21 ns

Transistor Type :

1 N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Style :

SMD/SMT

Height :

5.1 mm

Power Dissipation :

460W

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

JESD-609 Code :

e3

Current Rating :

30A

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Terminal Position :

Single

Maximum Operating Temperature :

+ 150 C

Length :

16.05 mm

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Mounting Type :

Surface Mount

Transistor Polarity :

N-Channel

Number of Terminals :

2

Product Status :

Active

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

460W Tc

Subcategory :

MOSFETs

Reach Compliance Code :

not_compliant

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

500V

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5V @ 250μA

Brand :

IXYS

Package Shape :

RECTANGULAR

Factory Lead Time :

24 Weeks

JEDEC-95 Code :

TO-268AA

Operating Temperature :

-55°C~150°C TJ

Series :

PolarHV™

Pulsed Drain Current-Max (IDM) :

75A

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

30A

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.2Ohm

Product Category :

MOSFET

Terminal Finish :

Matte Tin (Sn)