IXTT30N50L2

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Mfr.Part #
IXTT30N50L2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO268
Stock
27,878
In Stock :
27,878

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Continuous Drain Current (ID) :
30A
Power Dissipation-Max :
400W Tc
DS Breakdown Voltage-Min :
500V
Transistor Type :
1 N-Channel
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Current - Continuous Drain (Id) @ 25°C :
30A Tc
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
FET Type :
N-Channel
Threshold Voltage :
2.5V
Number of Channels :
1 Channel
Factory Lead Time :
24 Weeks
Transistor Polarity :
N-Channel
Number of Terminals :
2
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Base Product Number :
IXTT30
Drain-source On Resistance-Max :
0.2Ohm
Package :
Tube
FET Feature :
--
Manufacturer :
IXYS
REACH SVHC :
No SVHC
RoHS :
Details
Product Status :
Active
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Mounting Style :
SMD/SMT
Packaging :
Tube
Terminal Finish :
PURE TIN
Nominal Vgs :
2.5 V
Pin Count :
4
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
60A
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
30 A
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
400 W
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-268AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
ECCN Code :
EAR99
Number of Terminations :
2
Surface Mount :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
400W
Mount :
Surface Mount
Power Dissipation (Max) :
400W (Tc)
JESD-30 Code :
R-PSSO-G2
Vgs (Max) :
±20V
Supplier Device Package :
TO-268
Avalanche Energy Rating (Eas) :
1500 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
Linear L2™
Drain to Source Voltage (Vdss) :
500V
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 25V
Pbfree Code :
yes
Published :
2006
Datasheets
IXTT30N50L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N50L2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, IXTT30N50L2 pinout, IXTT30N50L2 datasheet PDF, IXTT30N50L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N50L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT30N50L2


N-Channel Tube 200m Ω @ 15A, 10V ±20V 8100pF @ 25V 240nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT30N50L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT30N50L2 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 60A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)


IXTT30N50L2 Applications


There are a lot of IXYS
IXTT30N50L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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