IXTT30N50L
- Mfr.Part #
- IXTT30N50L
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO268
- Stock
- 1,804
- In Stock :
- 1,804
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Product Status :
- Active
- Mounting Style :
- SMD/SMT
- Continuous Drain Current (ID) :
- 30A
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Subcategory :
- MOSFETs
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 500V
- Pin Count :
- 4
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 24 Weeks
- Base Product Number :
- IXTT30
- Supplier Device Package :
- TO-268
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain-source On Resistance-Max :
- 0.2Ohm
- Number of Terminations :
- 2
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation (Max) :
- 400W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2007
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 2
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Reach Compliance Code :
- Unknown
- DS Breakdown Voltage-Min :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Series :
- --
- Pulsed Drain Current-Max (IDM) :
- 60A
- JEDEC-95 Code :
- TO-268AA
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Power Dissipation-Max :
- 400W Tc
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- PURE TIN
- Datasheets
- IXTT30N50L

N-Channel Tube 200m Ω @ 15A, 10V ±20V 10200pF @ 25V 240nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT30N50L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 60A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTT30N50L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTT30N50L Applications
There are a lot of IXYS
IXTT30N50L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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