IXTT26N50P
- Mfr.Part #
- IXTT26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO268
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PolarHV™
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Factory Lead Time :
- 24 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-268AA
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Type :
- PolarHV Power MOSFET
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 400W (Tc)
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Configuration :
- Single
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 500V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Reach Compliance Code :
- not_compliant
- Tradename :
- PolarHV
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Pin Count :
- 4
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 78A
- Continuous Drain Current (ID) :
- 26A
- Number of Channels :
- 1 Channel
- Supplier Device Package :
- TO-268
- FET Type :
- N-Channel
- Mounting Style :
- SMD/SMT
- Turn-Off Delay Time :
- 58 ns
- Case Connection :
- DRAIN
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Power Dissipation-Max :
- 400W Tc
- Brand :
- IXYS
- Qualification Status :
- Not Qualified
- Width :
- 16.05 mm
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.23Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 14 mm
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 500V
- Subcategory :
- MOSFETs
- Fall Time (Typ) :
- 20 ns
- Power Dissipation :
- 400W
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 5.1 mm
- Number of Elements :
- 1
- Base Product Number :
- IXTT26
- Mounting Type :
- Surface Mount
- Channel Mode :
- Enhancement
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 25ns
- Vgs (Max) :
- ±30V
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 500 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Published :
- 2006
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 2
- Datasheets
- IXTT26N50P

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT26N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 78A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTT26N50P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXTT26N50P Applications
There are a lot of IXYS
IXTT26N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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