IXTT26N50P

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Mfr.Part #
IXTT26N50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 26A TO268
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
PolarHV™
Mount :
Surface Mount
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
1000 mJ
Factory Lead Time :
24 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Type :
MOSFET
JEDEC-95 Code :
TO-268AA
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Type :
PolarHV Power MOSFET
Product Category :
MOSFET
Power Dissipation (Max) :
400W (Tc)
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Configuration :
Single
Element Configuration :
Single
Drain to Source Breakdown Voltage :
500V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Reach Compliance Code :
not_compliant
Tradename :
PolarHV
Rds On (Max) @ Id, Vgs :
230m Ω @ 13A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Pin Count :
4
Terminal Position :
Single
JESD-609 Code :
e3
Number of Terminations :
2
Package :
Tube
Pulsed Drain Current-Max (IDM) :
78A
Continuous Drain Current (ID) :
26A
Number of Channels :
1 Channel
Supplier Device Package :
TO-268
FET Type :
N-Channel
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
58 ns
Case Connection :
DRAIN
FET Feature :
--
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Power Dissipation-Max :
400W Tc
Brand :
IXYS
Qualification Status :
Not Qualified
Width :
16.05 mm
Packaging :
Tube
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.23Ohm
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Terminal Finish :
Matte Tin (Sn)
Length :
14 mm
Product Status :
Active
Drain to Source Voltage (Vdss) :
500V
Subcategory :
MOSFETs
Fall Time (Typ) :
20 ns
Power Dissipation :
400W
JESD-30 Code :
R-PSSO-G2
Height :
5.1 mm
Number of Elements :
1
Base Product Number :
IXTT26
Mounting Type :
Surface Mount
Channel Mode :
Enhancement
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Rise Time :
25ns
Vgs (Max) :
±30V
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
500 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
yes
Additional Feature :
AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Published :
2006
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Number of Terminals :
2
Datasheets
IXTT26N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT26N50P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHV Power MOSFET, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Channels:1 Channel, Mounting Type:Surface Mount, IXTT26N50P pinout, IXTT26N50P datasheet PDF, IXTT26N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT26N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT26N50P


N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT26N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 78A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTT26N50P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)


IXTT26N50P Applications


There are a lot of IXYS
IXTT26N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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