IXTT26N50P
- Mfr.Part #
- IXTT26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO268
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 500V
- Factory Lead Time :
- 24 Weeks
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 5.1 mm
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Pulsed Drain Current-Max (IDM) :
- 78A
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Tradename :
- PolarHV
- Rise Time :
- 25ns
- Power Dissipation-Max :
- 400W Tc
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Power Dissipation (Max) :
- 400W (Tc)
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Mounting Style :
- SMD/SMT
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 20 ns
- Type :
- PolarHV Power MOSFET
- Brand :
- IXYS
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Package :
- Tube
- Series :
- PolarHV™
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-268AA
- Manufacturer :
- IXYS
- Turn-Off Delay Time :
- 58 ns
- Power Dissipation :
- 400W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 26A
- Number of Terminals :
- 2
- Terminal Finish :
- Matte Tin (Sn)
- Drain-source On Resistance-Max :
- 0.23Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Width :
- 16.05 mm
- Base Product Number :
- IXTT26
- Published :
- 2006
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±30V
- Subcategory :
- MOSFETs
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- TO-268
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 14 mm
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Datasheets
- IXTT26N50P

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT26N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 78A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTT26N50P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXTT26N50P Applications
There are a lot of IXYS
IXTT26N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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