IXTT24P20
- Mfr.Part #
- IXTT24P20
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 24A TO268
- Stock
- 267
- In Stock :
- 267
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Series :
- --
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Product Type :
- MOSFET
- Package :
- Tube
- Power Dissipation :
- 300W
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Resistance :
- 110mOhm
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- P-Channel
- Reach Compliance Code :
- Unknown
- Base Product Number :
- IXTT24
- Max Operating Temperature :
- 150 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 300W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 200V
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 500mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Max Power Dissipation :
- 300 W
- Terminal Finish :
- PURE TIN
- Published :
- 2005
- Case Connection :
- DRAIN
- Input Capacitance :
- 4.2 nF
- JESD-30 Code :
- R-PSSO-G2
- Min Operating Temperature :
- -55 °C
- Fall Time (Typ) :
- 28 ns
- Drain to Source Breakdown Voltage :
- -200V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Channel Mode :
- Enhancement
- FET Feature :
- --
- Rds On Max :
- 110 mΩ
- Manufacturer :
- IXYS
- Transistor Polarity :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Drain to Source Resistance :
- 150 mΩ
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Number of Channels :
- 1 Channel
- Rise Time :
- 29ns
- Packaging :
- Tube
- Product Status :
- Active
- Turn-Off Delay Time :
- 68 ns
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Factory Lead Time :
- 24 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Mounting Style :
- SMD/SMT
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-268
- Pulsed Drain Current-Max (IDM) :
- 96A
- Continuous Drain Current (ID) :
- 24A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Type :
- Surface Mount
- Transistor Type :
- 1 P-Channel
- Vgs (Max) :
- ±20V
- RoHS :
- Compliant
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXTT24P20

P-Channel Tube 110m Ω @ 500mA, 10V ±20V 4200pF @ 25V 150nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT24P20 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 68 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 96A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 150 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTT24P20 Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 96A.
single MOSFETs transistor is 150 mΩ
a 200V drain to source voltage (Vdss)
IXTT24P20 Applications
There are a lot of IXYS
IXTT24P20 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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