IXTT20P50P
- Mfr.Part #
- IXTT20P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 20A TO268
- Stock
- 106
- In Stock :
- 106
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Rise Time :
- 32 ns
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-268
- Factory Lead Time :
- 24 Weeks
- Pulsed Drain Current-Max (IDM) :
- 60A
- Vgs (Max) :
- ±20V
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Height :
- 5.1 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 10A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 P-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Base Product Number :
- IXTT20
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 460W Tc
- Package :
- Tube
- Width :
- 16.05 mm
- Drain Current-Max (Abs) (ID) :
- 20 A
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 500V
- Transistor Polarity :
- P-Channel
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Number of Terminals :
- 2
- Length :
- 14 mm
- Mount :
- Surface Mount
- JEDEC-95 Code :
- TO-268AA
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- JESD-609 Code :
- e3
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 5120pF @ 25V
- Power Dissipation (Max) :
- 460W (Tc)
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 103nC @ 10V
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 4
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2012
- Product Status :
- Active
- Series :
- PolarP™
- Channel Mode :
- Enhancement
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Tradename :
- PolarP
- Drain-source On Resistance-Max :
- 0.45Ohm
- Terminal Form :
- Gull wing
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Type :
- PolarP Power MOSFET
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 20A
- Power Dissipation-Max (Abs) :
- 460 W
- FET Feature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- P-Channel
- Datasheets
- IXTT20P50P

P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT20P50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5120pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTT20P50P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTT20P50P Applications
There are a lot of IXYS
IXTT20P50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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