IXTT20P50P

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Mfr.Part #
IXTT20P50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 500V 20A TO268
Stock
106
In Stock :
106

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
Rise Time :
32 ns
Pbfree Code :
yes
Supplier Device Package :
TO-268
Factory Lead Time :
24 Weeks
Pulsed Drain Current-Max (IDM) :
60A
Vgs (Max) :
±20V
Manufacturer :
IXYS
Terminal Finish :
Matte Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Height :
5.1 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
500V
Packaging :
Tube
Number of Pins :
3
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
450m Ω @ 10A, 10V
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 P-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Base Product Number :
IXTT20
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
460W Tc
Package :
Tube
Width :
16.05 mm
Drain Current-Max (Abs) (ID) :
20 A
Product Type :
MOSFET
DS Breakdown Voltage-Min :
500V
Transistor Polarity :
P-Channel
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Terminals :
2
Length :
14 mm
Mount :
Surface Mount
JEDEC-95 Code :
TO-268AA
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
2500 mJ
JESD-609 Code :
e3
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
5120pF @ 25V
Power Dissipation (Max) :
460W (Tc)
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Qualification Status :
Not Qualified
RoHS :
Details
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Pin Count :
4
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2012
Product Status :
Active
Series :
PolarP™
Channel Mode :
Enhancement
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Mounting Type :
Surface Mount
Tradename :
PolarP
Drain-source On Resistance-Max :
0.45Ohm
Terminal Form :
Gull wing
FET Type :
P-Channel
Transistor Application :
SWITCHING
Reach Compliance Code :
not_compliant
Transistor Element Material :
SILICON
Type :
PolarP Power MOSFET
Terminal Position :
Single
Number of Terminations :
2
Continuous Drain Current (ID) :
20A
Power Dissipation-Max (Abs) :
460 W
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
P-Channel
Datasheets
IXTT20P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Type:PolarP Power MOSFET, Number of Terminations:2, IXTT20P50P pinout, IXTT20P50P datasheet PDF, IXTT20P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT20P50P


P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT20P50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5120pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT20P50P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)


IXTT20P50P Applications


There are a lot of IXYS
IXTT20P50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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