IXTT20N50D

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Mfr.Part #
IXTT20N50D
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 20A TO268
Stock
18,362
In Stock :
18,362

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Width :
16.05 mm
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSSO-G2
Product Status :
Active
Reach Compliance Code :
not_compliant
Number of Elements :
1
Fall Time (Typ) :
75 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Packaging :
Tube
Vgs (Max) :
±30V
DS Breakdown Voltage-Min :
500 V
Package Shape :
RECTANGULAR
Brand :
IXYS
Mount :
Surface Mount
Lead Free :
Lead Free
Terminal Position :
Single
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
3.5V @ 250mA
Resistance :
330mOhm
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
Type :
High Voltage MOSFET
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Height :
5.1 mm
Drain Current-Max (Abs) (ID) :
20 A
Gate to Source Voltage (Vgs) :
30V
Product Category :
MOSFET
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Factory Lead Time :
24 Weeks
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Number of Channels :
1 Channel
Rise Time :
85ns
Power Dissipation-Max :
400W Tc
Continuous Drain Current (ID) :
20A
Series :
--
Number of Terminals :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
JEDEC-95 Code :
TO-268AA
Turn-Off Delay Time :
110 ns
Power Dissipation :
400W
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
500V
Pulsed Drain Current-Max (IDM) :
50A
Channel Mode :
Depletion
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Power Dissipation (Max) :
400W (Tc)
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Configuration :
Single
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.33 Ω
Surface Mount :
yes
Pin Count :
4
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Published :
2006
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Operating Mode :
Depletion Mode
Product Type :
MOSFET
Drain to Source Breakdown Voltage :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Base Product Number :
IXTT20
Length :
14 mm
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
TO-268
Rds On (Max) @ Id, Vgs :
330m Ω @ 10A, 10V
Transistor Type :
1 N-Channel
Terminal Form :
Gull wing
Power Dissipation-Max (Abs) :
400 W
Radiation Hardening :
No
FET Feature :
Depletion Mode
Datasheets
IXTT20N50D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT20N50D from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Type:High Voltage MOSFET, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXTT20N50D pinout, IXTT20N50D datasheet PDF, IXTT20N50D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT20N50D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT20N50D


N-Channel Tube 330m Ω @ 10A, 10V ±30V 2500pF @ 25V 125nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT20N50D Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT20N50D Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)


IXTT20N50D Applications


There are a lot of IXYS
IXTT20N50D applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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