IXTT20N50D
- Mfr.Part #
- IXTT20N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO268
- Stock
- 18,362
- In Stock :
- 18,362
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Width :
- 16.05 mm
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Product Status :
- Active
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Fall Time (Typ) :
- 75 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- DS Breakdown Voltage-Min :
- 500 V
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 3.5V @ 250mA
- Resistance :
- 330mOhm
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Type :
- High Voltage MOSFET
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Height :
- 5.1 mm
- Drain Current-Max (Abs) (ID) :
- 20 A
- Gate to Source Voltage (Vgs) :
- 30V
- Product Category :
- MOSFET
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Factory Lead Time :
- 24 Weeks
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Number of Channels :
- 1 Channel
- Rise Time :
- 85ns
- Power Dissipation-Max :
- 400W Tc
- Continuous Drain Current (ID) :
- 20A
- Series :
- --
- Number of Terminals :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- JEDEC-95 Code :
- TO-268AA
- Turn-Off Delay Time :
- 110 ns
- Power Dissipation :
- 400W
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Channel Mode :
- Depletion
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Power Dissipation (Max) :
- 400W (Tc)
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Configuration :
- Single
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.33 Ω
- Surface Mount :
- yes
- Pin Count :
- 4
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Operating Mode :
- Depletion Mode
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Base Product Number :
- IXTT20
- Length :
- 14 mm
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-268
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 10A, 10V
- Transistor Type :
- 1 N-Channel
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 400 W
- Radiation Hardening :
- No
- FET Feature :
- Depletion Mode
- Datasheets
- IXTT20N50D

N-Channel Tube 330m Ω @ 10A, 10V ±30V 2500pF @ 25V 125nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT20N50D Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTT20N50D Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTT20N50D Applications
There are a lot of IXYS
IXTT20N50D applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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