IXTT1N100
- Mfr.Part #
- IXTT1N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1.5A TO268
- Stock
- 39,847
- In Stock :
- 39,847
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 1kV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 60W Tc
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Width :
- 14 mm
- Turn-Off Delay Time :
- 20 ns
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Length :
- 16.05 mm
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 1.5A
- JESD-30 Code :
- R-PSSO-G2
- JEDEC-95 Code :
- TO-268AA
- Package :
- Tube
- Mounting Style :
- SMD/SMT
- Drain to Source Voltage (Vdss) :
- 1000V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 60W
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Surface Mount :
- yes
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 25μA
- Product Status :
- Obsolete
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-268
- Pin Count :
- 4
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 25V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 6A
- Rise Time :
- 19ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 60W (Tc)
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 2
- Series :
- --
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 60 W
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 1000 V
- JESD-609 Code :
- e3
- Published :
- 2002
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 1.5 A
- Mounting Type :
- Surface Mount
- Height :
- 5.1 mm
- Fall Time (Typ) :
- 18 ns
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 1A, 10V
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 11 Ω
- Datasheets
- IXTT1N100

N-Channel Tube 11 Ω @ 1A, 10V ±20V 480pF @ 25V 23nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT1N100 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 480pF @ 25V.This device has a continuous drain current (ID) of [1.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 1.5 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.A maximum pulsed drain current of 6A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTT1N100 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 6A.
a 1000V drain to source voltage (Vdss)
IXTT1N100 Applications
There are a lot of IXYS
IXTT1N100 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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