IXTT170N10P

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Mfr.Part #
IXTT170N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 170A TO268
Stock
2,379
In Stock :
2,379

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
FET Feature :
--
Power Dissipation-Max :
715W Tc
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 175 C
Supplier Device Package :
TO-268
Base Product Number :
IXTT170
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Length :
16.05 mm
Power Dissipation :
714W
Number of Terminals :
2
Mount :
Surface Mount
Mounting Type :
Surface Mount
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max (Abs) :
715 W
Configuration :
Single
Pin Count :
4
Surface Mount :
yes
Manufacturer :
IXYS
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Rise Time :
50ns
Package :
Tube
FET Type :
N-Channel
JEDEC-95 Code :
TO-268AA
Product Category :
MOSFET
Lead Free :
Lead Free
Vgs (Max) :
±20V
Reach Compliance Code :
not_compliant
Drain Current-Max (Abs) (ID) :
170 A
Published :
2010
JESD-609 Code :
e3
Pulsed Drain Current-Max (IDM) :
350A
Gate Charge (Qg) (Max) @ Vgs :
198nC @ 10V
Drain-source On Resistance-Max :
0.009Ohm
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
2
Height :
5.1 mm
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
100V
Transistor Element Material :
SILICON
Power Dissipation (Max) :
715W (Tc)
Qualification :
-
Continuous Drain Current (ID) :
170A
Product Type :
MOSFET
Continuous Drain Current Id :
170A
Drain to Source Breakdown Voltage :
100V
DS Breakdown Voltage-Min :
100 V
Vgs(th) (Max) @ Id :
5V @ 250μA
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
2000 mJ
Channel Type :
N Channel
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
33 ns
Mounting Style :
SMD/SMT
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Series :
Polar™
Rds On (Max) @ Id, Vgs :
9m Ω @ 500mA, 10V
JESD-30 Code :
R-PSSO-G2
Turn-Off Delay Time :
90 ns
Element Configuration :
Single
Terminal Position :
Single
Case Connection :
DRAIN
Width :
14 mm
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Product Status :
Active
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Factory Lead Time :
24 Weeks
Transistor Polarity :
N-Channel
Datasheets
IXTT170N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT170N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXTT170N10P pinout, IXTT170N10P datasheet PDF, IXTT170N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT170N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT170N10P


N-Channel Tube 9m Ω @ 500mA, 10V ±20V 6000pF @ 25V 198nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT170N10P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 170 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 350A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTT170N10P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)


IXTT170N10P Applications


There are a lot of IXYS
IXTT170N10P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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