IXTT140P10T
- Mfr.Part #
- IXTT140P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 140A TO268
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 140A
- Factory Lead Time :
- 24 Weeks
- Number of Pins :
- 3
- Transistor Polarity :
- P-Channel
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Series :
- TrenchP™
- Power Dissipation-Max :
- 568W Tc
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 70A, 10V
- Maximum Operating Temperature :
- + 150 C
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Single
- Brand :
- IXYS
- Mounting Style :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 400nC @ 10V
- JESD-609 Code :
- e3
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Channel Mode :
- Enhancement
- Pin Count :
- 4
- Pulsed Drain Current-Max (IDM) :
- 400A
- DS Breakdown Voltage-Min :
- 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 26 ns
- Supplier Device Package :
- TO-268
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Transistor Type :
- 1 P-Channel
- Power Dissipation (Max) :
- 568W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- FET Type :
- P-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.012Ohm
- Base Product Number :
- IXTT140
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 31400pF @ 25V
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Vgs (Max) :
- ±15V
- FET Feature :
- --
- Terminal Form :
- Gull wing
- Product Status :
- Active
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 100V
- Datasheets
- IXTT140P10T

P-Channel Tube 12m Ω @ 70A, 10V ±15V 31400pF @ 25V 400nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT140P10T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 31400pF @ 25V.This device conducts a continuous drain current (ID) of 140A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 400A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTT140P10T Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)
IXTT140P10T Applications
There are a lot of IXYS
IXTT140P10T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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