IXTT140N10P

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Mfr.Part #
IXTT140N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 140A TO268
Stock
1,662
In Stock :
1,662

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Surface Mount
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Case Connection :
DRAIN
Factory Lead Time :
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Pbfree Code :
yes
Brand :
IXYS
Mounting Style :
SMD/SMT
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Supplier Device Package :
TO-268
Power Dissipation (Max) :
600W (Tc)
Vgs (Max) :
±20V
Resistance :
11mOhm
Vgs(th) (Max) @ Id :
5V @ 250μA
Packaging :
Tube
Height :
5.1 mm
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSSO-G2
Product Category :
MOSFET
Reach Compliance Code :
Unknown
Package :
Tube
Published :
2006
Drain Current-Max (Abs) (ID) :
140 A
Number of Elements :
1
Tradename :
PolarHT
Channel Mode :
Enhancement
Power Dissipation-Max :
600W Tc
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Rds On (Max) @ Id, Vgs :
11m Ω @ 70A, 10V
Avalanche Energy Rating (Eas) :
2500 mJ
Maximum Operating Temperature :
+ 175 C
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
100 V
Product Status :
Active
Rise Time :
50ns
Width :
16.05 mm
Manufacturer :
IXYS
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Drain-source On Resistance-Max :
0.011 Ω
Drive Voltage (Max Rds On,Min Rds On) :
10V 15V
Surface Mount :
yes
Turn-Off Delay Time :
85 ns
FET Type :
N-Channel
Radiation Hardening :
No
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Type :
PolarHT Power MOSFET
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
300A
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Pin Count :
4
Series :
PolarHT™
Continuous Drain Current (ID) :
140A
Power Dissipation :
600W
Power Dissipation-Max (Abs) :
600 W
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Number of Terminals :
2
Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Terminal Finish :
Matte Tin (Sn)
Transistor Type :
1 N-Channel
JEDEC-95 Code :
TO-268AA
Drain to Source Breakdown Voltage :
100V
Length :
14 mm
Drain to Source Voltage (Vdss) :
100V
Base Product Number :
IXTT140
Terminal Form :
Gull wing
Number of Terminations :
2
Fall Time (Typ) :
26 ns
Datasheets
IXTT140N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT140N10P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:PolarHT Power MOSFET, Number of Terminations:2, IXTT140N10P pinout, IXTT140N10P datasheet PDF, IXTT140N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT140N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT140N10P


N-Channel Tube 11m Ω @ 70A, 10V ±20V 4700pF @ 25V 155nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT140N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4700pF @ 25V.This device has a continuous drain current (ID) of [140A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 140 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 85 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V 15V).

IXTT140N10P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXTT140N10P Applications


There are a lot of IXYS
IXTT140N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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