IXTT140N10P
- Mfr.Part #
- IXTT140N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 140A TO268
- Stock
- 1,662
- In Stock :
- 1,662
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Case Connection :
- DRAIN
- Factory Lead Time :
- 24 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Pbfree Code :
- yes
- Brand :
- IXYS
- Mounting Style :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Supplier Device Package :
- TO-268
- Power Dissipation (Max) :
- 600W (Tc)
- Vgs (Max) :
- ±20V
- Resistance :
- 11mOhm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tube
- Height :
- 5.1 mm
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSSO-G2
- Product Category :
- MOSFET
- Reach Compliance Code :
- Unknown
- Package :
- Tube
- Published :
- 2006
- Drain Current-Max (Abs) (ID) :
- 140 A
- Number of Elements :
- 1
- Tradename :
- PolarHT
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 600W Tc
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 70A, 10V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Maximum Operating Temperature :
- + 175 C
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 100 V
- Product Status :
- Active
- Rise Time :
- 50ns
- Width :
- 16.05 mm
- Manufacturer :
- IXYS
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Drain-source On Resistance-Max :
- 0.011 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V 15V
- Surface Mount :
- yes
- Turn-Off Delay Time :
- 85 ns
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Type :
- PolarHT Power MOSFET
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 300A
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Pin Count :
- 4
- Series :
- PolarHT™
- Continuous Drain Current (ID) :
- 140A
- Power Dissipation :
- 600W
- Power Dissipation-Max (Abs) :
- 600 W
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 2
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- 1 N-Channel
- JEDEC-95 Code :
- TO-268AA
- Drain to Source Breakdown Voltage :
- 100V
- Length :
- 14 mm
- Drain to Source Voltage (Vdss) :
- 100V
- Base Product Number :
- IXTT140
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 26 ns
- Datasheets
- IXTT140N10P

N-Channel Tube 11m Ω @ 70A, 10V ±20V 4700pF @ 25V 155nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT140N10P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4700pF @ 25V.This device has a continuous drain current (ID) of [140A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 140 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 85 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V 15V).
IXTT140N10P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXTT140N10P Applications
There are a lot of IXYS
IXTT140N10P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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