IXTQ96N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

250A

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

30V

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

28 ns

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Mount :

Through Hole

DS Breakdown Voltage-Min :

250 V

Pin Count :

3

Supplier Device Package :

TO-3P

Power Dissipation (Max) :

625W (Tc)

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

MOSFET

Number of Pins :

3

Power Dissipation-Max :

625W Tc

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Manufacturer :

IXYS

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

250V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2007

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

2000 mJ

Configuration :

Single

Number of Channels :

1 Channel

Brand :

IXYS

Continuous Drain Current (ID) :

96A

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

59 ns

Qualification Status :

Not Qualified

Power Dissipation :

625W

Transistor Type :

1 N-Channel

RoHS :

Details

Base Product Number :

IXTQ96

Element Configuration :

Single

Tradename :

HiPerFET

Rise Time :

22ns

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.029Ohm

Packaging :

Tube

Width :

4.9 mm

Drain to Source Breakdown Voltage :

250V

Package / Case :

TO-3P-3, SC-65-3

Number of Elements :

1

Mounting Style :

Through Hole

Package :

Tube

Length :

15.8 mm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

PURE TIN

Surface Mount :

No

FET Feature :

--

Vgs(th) (Max) @ Id :

5V @ 1mA

Channel Mode :

Enhancement

Product Type :

MOSFET

Vgs (Max) :

±30V

Series :

TrenchHV™

Rds On (Max) @ Id, Vgs :

29m Ω @ 500mA, 10V