IXTQ96N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Case Connection :

DRAIN

Continuous Drain Current (ID) :

96A

Reach Compliance Code :

Unknown

Power Dissipation (Max) :

625W (Tc)

Operating Temperature :

-55°C~150°C TJ

Product Category :

MOSFET

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Number of Terminals :

3

Subcategory :

MOSFETs

Transistor Element Material :

SILICON

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 1mA

ECCN Code :

EAR99

Package / Case :

TO-3P-3, SC-65-3

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Width :

4.9 mm

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

250 V

Drain to Source Voltage (Vdss) :

250V

Configuration :

Single

Terminal Finish :

PURE TIN

Pbfree Code :

yes

Channel Mode :

Enhancement

Packaging :

Tube

FET Type :

N-Channel

Rise Time :

22ns

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.029Ohm

Manufacturer :

IXYS

Product Type :

MOSFET

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

29m Ω @ 500mA, 10V

Power Dissipation-Max :

625W Tc

Package :

Tube

Number of Terminations :

3

Element Configuration :

Single

Vgs (Max) :

±30V

Supplier Device Package :

TO-3P

Maximum Operating Temperature :

+ 150 C

Published :

2007

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

2000 mJ

Turn-Off Delay Time :

59 ns

Number of Pins :

3

Length :

15.8 mm

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXTQ96

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Mount :

Through Hole

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

250A

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

625W

Number of Elements :

1

Series :

TrenchHV™

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Fall Time (Typ) :

28 ns

Drain to Source Breakdown Voltage :

250V