IXTQ130N10T

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Mfr.Part #
IXTQ130N10T
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO3P
Stock
16
In Stock :
16

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
500 mJ
Pin Count :
3
Manufacturer :
IXYS
Product Category :
MOSFET
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Power Dissipation (Max) :
360W (Tc)
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Packaging :
Tube
Maximum Operating Temperature :
+ 175 C
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
Series :
TrenchMV™
Transistor Polarity :
N-Channel
Pbfree Code :
yes
Qualification Status :
Not Qualified
Base Product Number :
IXTQ130
Tradename :
HiPerFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Additional Feature :
AVALANCHE RATED, ULTRA LOW RESISTANCE
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
130A
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 25A, 10V
Brand :
IXYS
Reach Compliance Code :
Unknown
Element Configuration :
Single
Published :
2008
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Configuration :
Single
Fall Time (Typ) :
28 ns
Case Connection :
DRAIN
ECCN Code :
EAR99
FET Type :
N-Channel
Length :
15.8 mm
RoHS :
Details
Mount :
Through Hole
Product Type :
MOSFET
Package :
Tube
Supplier Device Package :
TO-3P
Drain to Source Voltage (Vdss) :
100V
Drain to Source Breakdown Voltage :
100V
Package / Case :
TO-3P-3, SC-65-3
Mounting Type :
Through Hole
Power Dissipation-Max :
360W Tc
Drain-source On Resistance-Max :
0.0091Ohm
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Width :
4.9 mm
Number of Channels :
1 Channel
Rise Time :
47ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
Power Dissipation :
360W
Product Status :
Active
Height :
20.3 mm
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
44 ns
Mounting Style :
Through Hole
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXTQ130N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ130N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXTQ130N10T pinout, IXTQ130N10T datasheet PDF, IXTQ130N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ130N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ130N10T


N-Channel Tube 9.1m Ω @ 25A, 10V ±20V 5080pF @ 25V 104nC @ 10V 100V TO-3P-3, SC-65-3

IXTQ130N10T Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5080pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 130A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [44 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTQ130N10T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
a 100V drain to source voltage (Vdss)


IXTQ130N10T Applications


There are a lot of IXYS
IXTQ130N10T applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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