IXTQ14N60P
- Mfr.Part #
- IXTQ14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO3P
- Stock
- 279
- In Stock :
- 279
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 20.3 mm
- Drain Current-Max (Abs) (ID) :
- 14 A
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Tradename :
- PolarHV
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 26 ns
- Element Configuration :
- Single
- Mount :
- Through Hole
- Power Dissipation :
- 300W
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Drain to Source Breakdown Voltage :
- 600V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Channel Mode :
- Enhancement
- Surface Mount :
- No
- Transistor Type :
- 1 N-Channel
- Packaging :
- Tube
- Product Type :
- MOSFET
- Series :
- PolarHV™
- Rise Time :
- 27ns
- Configuration :
- Single
- Supplier Device Package :
- TO-3P
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 600V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 600V
- Base Product Number :
- IXTQ14
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- JESD-609 Code :
- e3
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Compliant
- Width :
- 4.9 mm
- Continuous Drain Current (ID) :
- 14A
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 300W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Type :
- PolarHV Power MOSFET
- RoHS :
- Details
- Lead Free :
- Lead Free
- Number of Terminals :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Polarity/Channel Type :
- P-Channel
- Power Dissipation-Max (Abs) :
- 300 W
- Current Rating :
- 14A
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Pbfree Code :
- yes
- Length :
- 15.8 mm
- Turn-Off Delay Time :
- 70 ns
- Drain-source On Resistance-Max :
- 0.55Ohm
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 300W (Tc)
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 42A
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 600 V
- Datasheets
- IXTQ14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-3P-3, SC-65-3
IXTQ14N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.A device's maximum input capacitance is 2500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 14 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 42A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTQ14N60P Applications
There are a lot of IXYS
IXTQ14N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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