IXTQ14N60P
- Mfr.Part #
- IXTQ14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO3P
- Stock
- 279
- In Stock :
- 279
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 900 mJ
- DS Breakdown Voltage-Min :
- 600 V
- Factory Lead Time :
- 24 Weeks
- Drain Current-Max (Abs) (ID) :
- 14 A
- Width :
- 4.9 mm
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Number of Terminals :
- 3
- Configuration :
- Single
- Supplier Device Package :
- TO-3P
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Length :
- 15.8 mm
- Package :
- Tube
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation-Max (Abs) :
- 300 W
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drain to Source Breakdown Voltage :
- 600V
- Product Type :
- MOSFET
- Brand :
- IXYS
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.55Ohm
- Turn-Off Delay Time :
- 70 ns
- Power Dissipation (Max) :
- 300W (Tc)
- Voltage - Rated DC :
- 600V
- Mounting Type :
- Through Hole
- Type :
- PolarHV Power MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Tradename :
- PolarHV
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 300W
- Fall Time (Typ) :
- 26 ns
- Lead Free :
- Lead Free
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- P-Channel
- Terminal Form :
- THROUGH-HOLE
- Transistor Type :
- 1 N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Product Status :
- Active
- FET Feature :
- --
- Series :
- PolarHV™
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXTQ14
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 42A
- Continuous Drain Current (ID) :
- 14A
- Reach Compliance Code :
- Compliant
- Rise Time :
- 27ns
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Height :
- 20.3 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 600V
- Current Rating :
- 14A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Datasheets
- IXTQ14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-3P-3, SC-65-3
IXTQ14N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.A device's maximum input capacitance is 2500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 14 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 42A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTQ14N60P Applications
There are a lot of IXYS
IXTQ14N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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