IXTQ14N60P

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Mfr.Part #
IXTQ14N60P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO3P
Stock
279
In Stock :
279

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Power Dissipation-Max (Abs) :
300 W
Series :
PolarHV™
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
600V
Number of Terminals :
3
Transistor Application :
SWITCHING
Tradename :
PolarHV
Vgs (Max) :
±30V
Package / Case :
TO-3P-3, SC-65-3
FET Type :
N-Channel
Pin Count :
3
Terminal Position :
Single
Packaging :
Tube
Minimum Operating Temperature :
- 55 C
Lead Free :
Lead Free
Fall Time (Typ) :
26 ns
Voltage - Rated DC :
600V
Supplier Device Package :
TO-3P
Power Dissipation (Max) :
300W (Tc)
Rise Time :
27ns
Width :
4.9 mm
Current Rating :
14A
Brand :
IXYS
Surface Mount :
No
Power Dissipation :
300W
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Element Configuration :
Single
Base Product Number :
IXTQ14
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Type :
PolarHV Power MOSFET
Avalanche Energy Rating (Eas) :
900 mJ
Mounting Type :
Through Hole
Maximum Operating Temperature :
+ 150 C
Drain-source On Resistance-Max :
0.55Ohm
Case Connection :
DRAIN
Continuous Drain Current (ID) :
14A
Number of Terminations :
3
Mount :
Through Hole
Polarity/Channel Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
JESD-609 Code :
e3
Channel Mode :
Enhancement
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Length :
15.8 mm
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Transistor Element Material :
SILICON
FET Feature :
--
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Channels :
1 Channel
Power Dissipation-Max :
300W Tc
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Drain to Source Breakdown Voltage :
600V
Manufacturer :
IXYS
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
42A
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Turn-Off Delay Time :
70 ns
Height :
20.3 mm
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
600 V
Product Status :
Active
Drain Current-Max (Abs) (ID) :
14 A
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Reach Compliance Code :
Compliant
Factory Lead Time :
24 Weeks
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Published :
2006
Datasheets
IXTQ14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ14N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Type:PolarHV Power MOSFET, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTQ14N60P pinout, IXTQ14N60P datasheet PDF, IXTQ14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-3P-3, SC-65-3

IXTQ14N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.A device's maximum input capacitance is 2500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 14 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 42A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTQ14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXTQ14N60P Applications


There are a lot of IXYS
IXTQ14N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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