IXTQ14N60P

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Mfr.Part #
IXTQ14N60P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO3P
Stock
279
In Stock :
279

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
900 mJ
DS Breakdown Voltage-Min :
600 V
Factory Lead Time :
24 Weeks
Drain Current-Max (Abs) (ID) :
14 A
Width :
4.9 mm
Package Shape :
RECTANGULAR
RoHS :
Details
Number of Terminals :
3
Configuration :
Single
Supplier Device Package :
TO-3P
Published :
2006
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Packaging :
Tube
Length :
15.8 mm
Package :
Tube
Power Dissipation-Max :
300W Tc
Power Dissipation-Max (Abs) :
300 W
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Drain to Source Breakdown Voltage :
600V
Product Type :
MOSFET
Brand :
IXYS
Case Connection :
DRAIN
Number of Elements :
1
Drain-source On Resistance-Max :
0.55Ohm
Turn-Off Delay Time :
70 ns
Power Dissipation (Max) :
300W (Tc)
Voltage - Rated DC :
600V
Mounting Type :
Through Hole
Type :
PolarHV Power MOSFET
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
JESD-609 Code :
e3
Tradename :
PolarHV
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
300W
Fall Time (Typ) :
26 ns
Lead Free :
Lead Free
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Number of Channels :
1 Channel
Mount :
Through Hole
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
P-Channel
Terminal Form :
THROUGH-HOLE
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Vgs (Max) :
±30V
Manufacturer :
IXYS
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Number of Pins :
3
Package / Case :
TO-3P-3, SC-65-3
Product Status :
Active
FET Feature :
--
Series :
PolarHV™
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXTQ14
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
42A
Continuous Drain Current (ID) :
14A
Reach Compliance Code :
Compliant
Rise Time :
27ns
Transistor Element Material :
SILICON
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Height :
20.3 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
600V
Current Rating :
14A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Datasheets
IXTQ14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ14N60P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, IXTQ14N60P pinout, IXTQ14N60P datasheet PDF, IXTQ14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-3P-3, SC-65-3

IXTQ14N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.A device's maximum input capacitance is 2500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 14 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 42A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTQ14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXTQ14N60P Applications


There are a lot of IXYS
IXTQ14N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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