IXTQ14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

900 mJ

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

300W (Tc)

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Transistor Polarity :

N-Channel

Rise Time :

27ns

Supplier Device Package :

TO-3P

Product Type :

MOSFET

Width :

4.9 mm

Number of Channels :

1 Channel

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Factory Lead Time :

24 Weeks

Series :

PolarHV™

Surface Mount :

No

Power Dissipation-Max :

300W Tc

Power Dissipation :

300W

Drain Current-Max (Abs) (ID) :

14 A

Pulsed Drain Current-Max (IDM) :

42A

RoHS :

Details

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

14A

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-3P-3, SC-65-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

DS Breakdown Voltage-Min :

600 V

Element Configuration :

Single

Number of Elements :

1

Vgs (Max) :

±30V

Reach Compliance Code :

Compliant

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

THROUGH-HOLE

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Mounting Type :

Through Hole

Number of Terminals :

3

Drain-source On Resistance-Max :

0.55Ohm

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Mounting Style :

Through Hole

Length :

15.8 mm

Fall Time (Typ) :

26 ns

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Terminations :

3

Current Rating :

14A

Height :

20.3 mm

Configuration :

Single

Base Product Number :

IXTQ14

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

PolarHV

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Published :

2006

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Power Dissipation-Max (Abs) :

300 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

70 ns

Brand :

IXYS

Transistor Element Material :

SILICON

Package :

Tube

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Voltage - Rated DC :

600V

Polarity/Channel Type :

P-Channel

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Mount :

Through Hole

Type :

PolarHV Power MOSFET

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

14A Tc