IXTQ110N055P

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Mfr.Part #
IXTQ110N055P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 55V 110A TO3P
Stock
95,188
In Stock :
95,188

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
4.9mm
Turn On Delay Time :
27 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
RoHS :
Compliant
Pulsed Drain Current-Max (IDM) :
250A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Resistance :
13.5 mΩ
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Fall Time (Typ) :
45 ns
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
Power Dissipation (Max) :
390W (Tc)
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Manufacturer :
IXYS Corporation
Surface Mount :
No
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
2210pF @ 25V
Length :
15.8mm
Package / Case :
TO-3P-3, SC-65-3
Terminal Finish :
Matte Tin (Sn)
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Max Operating Temperature :
175 °C
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
1000 mJ
Transistor Element Material :
SILICON
Power Dissipation :
390W
Package Shape :
RECTANGULAR
Height :
20.3mm
Input Capacitance :
2.21 nF
Drain to Source Voltage (Vdss) :
55V
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55 °C
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
76nC @ 10V
DS Breakdown Voltage-Min :
55 V
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Supplier Device Package :
TO-3P
Drain to Source Breakdown Voltage :
55V
Max Power Dissipation :
390 W
Factory Lead Time :
10 Weeks
Rds On (Max) @ Id, Vgs :
13.5m Ω @ 500mA, 10V
Turn-On Delay Time :
27 ns
Mount :
Through Hole
Rise Time :
53ns
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Base Product Number :
IXTQ110
JESD-609 Code :
e3
Element Configuration :
Single
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Published :
2006
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Packaging :
Tube
Series :
PolarHT™
Continuous Drain Current (ID) :
110A
Rds On Max :
13.5 mΩ
Turn-Off Delay Time :
66 ns
Case Connection :
DRAIN
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
390W Tc
Drain-source On Resistance-Max :
0.0135 Ω
Number of Terminals :
3
Number of Elements :
1
Pin Count :
3
Datasheets
IXTQ110N055P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ110N055P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, IXTQ110N055P pinout, IXTQ110N055P datasheet PDF, IXTQ110N055P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ110N055P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ110N055P


N-Channel Tube 13.5m Ω @ 500mA, 10V ±20V 2210pF @ 25V 76nC @ 10V 55V TO-3P-3, SC-65-3

IXTQ110N055P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2210pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 66 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 13.5 mΩ exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 27 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 55 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTQ110N055P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
single MOSFETs transistor is 13.5 mΩ
a 55V drain to source voltage (Vdss)


IXTQ110N055P Applications


There are a lot of IXYS
IXTQ110N055P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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