IXTQ110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Fall Time (Typ) :

25 ns

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Surface Mount :

No

FET Feature :

--

Avalanche Energy Rating (Eas) :

1000 mJ

Max Power Dissipation :

480 W

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Channel Mode :

Enhancement

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tube

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Length :

15.8 mm

Pin Count :

3

Polarity/Channel Type :

N-Channel

Height :

20.3 mm

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

TO-3P

ECCN Code :

EAR99

Power Dissipation-Max :

480W Tc

Tradename :

PolarHT

Min Operating Temperature :

-55 °C

Max Operating Temperature :

175 °C

Input Capacitance :

3.55 nF

Pulsed Drain Current-Max (IDM) :

250A

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

110A

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Product Category :

MOSFET

Factory Lead Time :

24 Weeks

Number of Terminals :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Product Status :

Active

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn)

Width :

4.9 mm

Power Dissipation (Max) :

480W (Tc)

Published :

2006

Base Product Number :

IXTQ110

Subcategory :

MOSFETs

Package / Case :

TO-3P-3, SC-65-3

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Type :

PolarHT Power MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

480W

Rds On Max :

15 mΩ

Transistor Polarity :

N-Channel

Configuration :

Single

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Drain to Source Resistance :

15 mΩ

Product Type :

MOSFET

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Case Connection :

DRAIN

RoHS :

Details

Number of Pins :

3

DS Breakdown Voltage-Min :

100 V

Rise Time :

25ns

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.015Ohm

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Series :

PolarHT™

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

65 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR