IXTQ110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-3P-3, SC-65-3

Number of Terminals :

3

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

480W

Transistor Polarity :

N-Channel

Power Dissipation-Max :

480W Tc

Vgs (Max) :

±20V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Length :

15.8 mm

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.015Ohm

Case Connection :

DRAIN

Package :

Tube

Width :

4.9 mm

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

3.55 nF

Rise Time :

25ns

Mount :

Through Hole

Package Shape :

RECTANGULAR

Tradename :

PolarHT

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Reach Compliance Code :

Unknown

Supplier Device Package :

TO-3P

Terminal Position :

Single

Number of Terminations :

3

Drain to Source Breakdown Voltage :

100V

Power Dissipation (Max) :

480W (Tc)

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

110A

Terminal Finish :

Matte Tin (Sn)

Product Status :

Active

Pbfree Code :

yes

Qualification Status :

Not Qualified

Rds On Max :

15 mΩ

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Series :

PolarHT™

Min Operating Temperature :

-55 °C

DS Breakdown Voltage-Min :

100 V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

250A

Mounting Style :

Through Hole

Type :

PolarHT Power MOSFET

Minimum Operating Temperature :

- 55 C

Avalanche Energy Rating (Eas) :

1000 mJ

Product Category :

MOSFET

FET Feature :

--

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

No

Subcategory :

MOSFETs

Pin Count :

3

Number of Pins :

3

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Published :

2006

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Maximum Operating Temperature :

+ 175 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 250μA

Max Power Dissipation :

480 W

Max Operating Temperature :

175 °C

Height :

20.3 mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXTQ110

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Factory Lead Time :

24 Weeks

Turn-Off Delay Time :

65 ns

Product Type :

MOSFET

Drain to Source Resistance :

15 mΩ

JESD-30 Code :

R-PSFM-T3

RoHS :

Details

Configuration :

Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Fall Time (Typ) :

25 ns