IXTQ110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Tradename :

PolarHT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Product Type :

MOSFET

DS Breakdown Voltage-Min :

100 V

Number of Pins :

3

Fall Time (Typ) :

25 ns

Max Power Dissipation :

480 W

FET Type :

N-Channel

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

100V

Mount :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Rds On Max :

15 mΩ

Length :

15.8 mm

Mounting Type :

Through Hole

Drain to Source Resistance :

15 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

1000 mJ

Factory Lead Time :

24 Weeks

Case Connection :

DRAIN

Subcategory :

MOSFETs

Vgs (Max) :

±20V

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

JESD-30 Code :

R-PSFM-T3

Rise Time :

25ns

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

Number of Elements :

1

Pbfree Code :

yes

ECCN Code :

EAR99

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Height :

20.3 mm

Qualification Status :

Not Qualified

Width :

4.9 mm

Max Operating Temperature :

175 °C

Packaging :

Tube

Type :

PolarHT Power MOSFET

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Reach Compliance Code :

Unknown

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Base Product Number :

IXTQ110

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

480W (Tc)

Published :

2006

Power Dissipation-Max :

480W Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Product Status :

Active

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

480W

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-3P

Number of Terminals :

3

Input Capacitance :

3.55 nF

Drain-source On Resistance-Max :

0.015Ohm

Continuous Drain Current (ID) :

110A

RoHS :

Details

Transistor Application :

SWITCHING

Package :

Tube

Series :

PolarHT™

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 175 C

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

250A

Pin Count :

3

Turn-Off Delay Time :

65 ns

Configuration :

Single