IXTQ110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Factory Lead Time :

24 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

25 ns

Min Operating Temperature :

-55 °C

Pulsed Drain Current-Max (IDM) :

250A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Power Dissipation-Max :

480W Tc

Series :

PolarHT™

Rise Time :

25ns

Power Dissipation :

480W

Polarity/Channel Type :

N-Channel

Product Status :

Active

Avalanche Energy Rating (Eas) :

1000 mJ

Number of Channels :

1 Channel

Operating Temperature :

-55°C~175°C TJ

Power Dissipation (Max) :

480W (Tc)

Number of Elements :

1

Transistor Polarity :

N-Channel

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Maximum Operating Temperature :

+ 175 C

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance :

3.55 nF

Minimum Operating Temperature :

- 55 C

Configuration :

Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

110A

Reach Compliance Code :

Unknown

Number of Pins :

3

Type :

PolarHT Power MOSFET

ECCN Code :

EAR99

Max Operating Temperature :

175 °C

Length :

15.8 mm

Supplier Device Package :

TO-3P

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Qualification Status :

Not Qualified

Product Category :

MOSFET

Tradename :

PolarHT

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Drain to Source Breakdown Voltage :

100V

Package :

Tube

Drain to Source Resistance :

15 mΩ

Max Power Dissipation :

480 W

Height :

20.3 mm

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

100 V

Drain-source On Resistance-Max :

0.015Ohm

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Turn-Off Delay Time :

65 ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Product Type :

MOSFET

Packaging :

Tube

Package / Case :

TO-3P-3, SC-65-3

Rds On Max :

15 mΩ

Number of Terminations :

3

FET Feature :

--

Base Product Number :

IXTQ110

Width :

4.9 mm

Number of Terminals :

3

Mounting Type :

Through Hole

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Subcategory :

MOSFETs

Package Shape :

RECTANGULAR

Brand :

IXYS

Pbfree Code :

yes

Mounting Style :

Through Hole

Published :

2006

JESD-609 Code :

e3