IXTQ102N15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Pin Count :

3

JESD-609 Code :

e3

Supplier Device Package :

TO-3P

Input Capacitance (Ciss) (Max) @ Vds :

5220pF @ 25V

Power Dissipation-Max :

455W Tc

Published :

2008

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

455 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

300 A

Power Dissipation (Max) :

455W (Tc)

Drain to Source Voltage (Vdss) :

150V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Drain Current-Max (Abs) (ID) :

102 A

Rds On (Max) @ Id, Vgs :

18m Ω @ 500mA, 10V

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Input Capacitance :

5.22 nF

Package / Case :

TO-3P-3, SC-65-3

Max Operating Temperature :

175 °C

Power Dissipation :

455W

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Fall Time (Typ) :

22 ns

Manufacturer :

IXYS

Channel Mode :

Enhancement

Max Power Dissipation :

455 W

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Tradename :

HiPerFET

Drain-source On Resistance-Max :

0.018Ohm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 1mA

Rds On Max :

18 mΩ

Brand :

IXYS

Transistor Type :

1 N-Channel

Element Configuration :

Single

Packaging :

Tube

Terminal Finish :

PURE TIN

Number of Terminations :

3

Mount :

Through Hole

Length :

15.8 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Qualification Status :

Not Qualified

Product Status :

Obsolete

Avalanche Energy Rating (Eas) :

750 mJ

Product Type :

MOSFET

Number of Elements :

1

Drain to Source Resistance :

18 mΩ

Additional Feature :

AVALANCHE RATED

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Number of Terminals :

3

FET Type :

N-Channel

Mounting Type :

Through Hole

Number of Pins :

3

Surface Mount :

No

Min Operating Temperature :

-55 °C

Maximum Operating Temperature :

+ 175 C

Transistor Element Material :

SILICON

RoHS :

Details

Package :

Tube

Series :

--

DS Breakdown Voltage-Min :

150 V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

102A

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Base Product Number :

IXTQ102

Rise Time :

14ns

Width :

4.9 mm

Product Category :

MOSFET

Pbfree Code :

yes

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

150V