IXTQ120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Qualification :

-

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

THROUGH-HOLE

Channel Mode :

Enhancement

Base Product Number :

IXTQ120

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Supplier Device Package :

TO-3P

JESD-609 Code :

e3

Package :

Tube

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Turn-Off Delay Time :

100 ns

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Continuous Drain Current Id :

120A

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.022Ohm

Channel Type :

N Channel

Width :

4.9 mm

Mounting Style :

Through Hole

Product Category :

MOSFET

ECCN Code :

EAR99

Power Dissipation-Max :

714W Tc

Series :

PolarHT™

Number of Elements :

1

Factory Lead Time :

24 Weeks

Published :

2006

Mounting Type :

Through Hole

Surface Mount :

No

Pin Count :

3

Tradename :

PolarHT

Transistor Type :

1 N-Channel

Power Dissipation :

714W

Pulsed Drain Current-Max (IDM) :

300 A

Element Configuration :

Single

Reach Compliance Code :

Compliant

Subcategory :

MOSFETs

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

31 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Vgs (Max) :

±20V

Power Dissipation (Max) :

714W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

200 V

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

120A

Qualification Status :

Not Qualified

Length :

15.8 mm

Type :

PolarHT Power MOSFET

Rise Time :

35ns

Number of Channels :

1 Channel

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Maximum Operating Temperature :

+ 175 C

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Case Connection :

DRAIN

Product Type :

MOSFET

Brand :

IXYS

RoHS :

Details

Height :

20.3 mm

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

2000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

200V

Package / Case :

TO-3P-3, SC-65-3

Number of Terminals :

3

FET Type :

N-Channel

FET Feature :

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