IXTQ10P50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Fall Time (Typ) :

44 ns

Number of Elements :

1

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Supplier Device Package :

TO-3P

Drain-source On Resistance-Max :

1Ohm

Pulsed Drain Current-Max (IDM) :

30A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Length :

15.8 mm

Drain Current-Max (Abs) (ID) :

10 A

Package / Case :

TO-3P-3, SC-65-3

Mounting Type :

Through Hole

Factory Lead Time :

24 Weeks

Turn-Off Delay Time :

52 ns

Package :

Tube

Brand :

IXYS

Element Configuration :

Single

Terminal Finish :

PURE TIN

Gate to Source Voltage (Vgs) :

20V

Maximum Operating Temperature :

+ 150 C

Lead Free :

Lead Free

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Power Dissipation :

300W

Avalanche Energy Rating (Eas) :

1500 mJ

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Pin Count :

3

Polarity/Channel Type :

P-Channel

Product Category :

MOSFET

Product Status :

Active

Mount :

Through Hole

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

500V

Published :

2009

Power Dissipation-Max (Abs) :

300 W

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Number of Terminals :

3

Base Product Number :

IXTQ10

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

500 V

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

300W Tc

Width :

4.9 mm

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Transistor Type :

1 P-Channel

Number of Channels :

1 Channel

Power Dissipation (Max) :

300W (Tc)

Minimum Operating Temperature :

- 55 C

Continuous Drain Current (ID) :

10A

Rise Time :

28ns

Drain to Source Breakdown Voltage :

-500V

FET Type :

P-Channel

Series :

PolarP™

Rds On (Max) @ Id, Vgs :

1 Ω @ 5A, 10V

Transistor Polarity :

P-Channel

Number of Terminations :

3

RoHS :

Details